FDM2509NZ

FET, MOSFET Arrays Overview

The FDM2509NZ is a monolithic common drain dual N-Channel PowerTrench MOSFET designed for low-voltage applications. It features an optimized RDS(ON) at VGS = 2.5V and utilizes a MicroFET lead frame with all drains on one side. Key electrical parameters include a Drain-Source Voltage (VDSS) of 20V, a continuous Drain Current (ID) of 8.7A, and a maximum power dissipation of 2.2W. The device operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel configuration in a single package
• Optimized low on-resistance for 2.5V gate drive specifications
• Low profile 0.8mm maximum height in MicroFET package
• Integrated ESD protection diode between gate and source

FET, MOSFET Arrays Applications

• Li-Ion Battery Pack management systems
• Low voltage DC-DC converters
• Load switch applications requiring fast switching

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor, now part of onsemi, when sourcing this component. Confirm the specific revision level matches design requirements. Ensure the ordering suffix corresponds to the standard reel quantity of 3000 units. Check for RoHS compliance status if required by local regulations.

FET, MOSFET Arrays Selection Notes

Select this component for circuits requiring a 20V rating and high current handling up to 8.7A. Consider the thermal resistance values based on the copper pad area used for mounting. Evaluate the gate threshold voltage variations across temperature ranges to ensure reliable switching at low gate voltages.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of MOSFETs, known for advanced process technology optimizing on-resistance. It is housed in a MicroFET 2x5 mm package, which provides a compact solution for space-constrained designs while maintaining efficient thermal performance through bottom drain contact.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives from the same manufacturer series. Verify that any substitute maintains the 20V VDSS rating and similar RDS(ON) characteristics at 2.5V and 4.5V gate drives. Ensure the replacement package dimensions match the existing footprint.

FET, MOSFET Arrays FAQ

What is the purpose of the diode connected between the gate and source?

It serves only as protection against Electrostatic Discharge (ESD). It does not imply a gate overvoltage rating.

How is the thermal resistance defined for this package?

RθJA is the sum of junction-to-case and case-to-ambient resistance. The case thermal reference is defined as the solder mounting surface of the drain pins.

What are the typical switching times for this device?

Typical turn-on delay is 11ns, rise time is 15ns, turn-off delay is 27ns, and fall time is 12ns under specified test conditions.