FET, MOSFET Arrays FDMA1027PT product image

FDMA1027PT

  • Description:MOSFET 2P-CH 20V 3A 6MICROFET
  • Series:PowerTrench®

SKU:f835cba5cf78 Category: Brand:

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FDMA1027PT is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 3A 6MICROFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMA1027PT

  • Description:MOSFET 2P-CH 20V 3A 6MICROFET
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:3A
  • Rds On (Max) @ Id, Vgs:120mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id:1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:435pF @ 10V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VDFN Exposed Pad
  • Supplier Device Package:6-MicroFET (2x2)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMA1027PT

FDMA1027PT

FET, MOSFET Arrays Overview

The FDMA1027PT is a dual P-Channel PowerTrench MOSFET designed for ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance to minimize conduction losses. The device supports bi-directional current flow in a common source configuration and offers exceptional thermal performance within its MicroFET 2x2 Thin package, which has a maximum height of 0.55 mm. Key electrical parameters include a drain-to-source voltage (VDS) of -20 V, continuous drain current (ID) of -3 A at 25 °C, and a maximum rDS(on) of 120 mΩ at VGS = -4.5 V. Total gate charge (Qg) is typically 46 nC.

FET, MOSFET Arrays Feature Summary

  • Dual independent P-Channel MOSFETs integrated into a single package for battery charge switch applications.
  • Low profile MicroFET 2x2 Thin package providing exceptional thermal performance relative to physical size.
  • RoHS compliant construction free from halogenated compounds and antimony oxides.

FET, MOSFET Arrays Applications

  • Battery management systems
  • Load switches
  • Battery protection circuits

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor based on the provided datasheet documentation. Confirm the specific ordering suffix 'PT' corresponds to the tape and reel packaging format containing 3000 units per 7-inch reel. Ensure compliance with RoHS standards and absence of halogenated compounds during component qualification.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring compact dual P-Channel switching solutions in portable electronics. Evaluate thermal resistance values based on specific PCB copper pad dimensions, as junction-to-ambient resistance varies significantly between single and dual operation modes. Consider the -20 V rating and -3 A current capability against system load requirements.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench MOSFET family, utilizing shielded gate trench technology to achieve low on-resistance and fast switching speeds. The MicroFET 2x2 Thin package is optimized for space-constrained mobile devices, offering high power density and efficient heat dissipation compared to traditional surface-mount packages.

FET, MOSFET Arrays Replacement Considerations

FDMA1029PZ: Dual P-Channel PowerTrench MOSFET with similar -20 V rating but lower on-resistance (60 mΩ typical). Verify pinout compatibility and thermal characteristics before substitution.

FDMA1027PTFDMA1027PT

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