FDMB3800N

FET, MOSFET Arrays Overview

The FDMB3800N is a dual N-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in an 8-lead MicroFET package. It features a drain-source breakdown voltage (Vds) of 25 V and a continuous drain current (Id) of 7 A. The device exhibits a maximum on-resistance (Rds(on)) of 23 mΩ at a gate-source voltage (Vgs) of 4.5 V. Operating within a temperature range of -55°C to +150°C, it has a power dissipation rating of 1.6 W and a gate charge (Qg) of 17 nC.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent N-channel transistors in a single compact surface-mount package.
• Optimized low on-resistance characteristics for efficient power switching applications.
• Enhanced thermal stability supporting operation up to 150°C junction temperature.

FET, MOSFET Arrays Applications

• Low-voltage DC-DC converter circuits
• Load switching and power distribution management
• Battery protection and control systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to confirm exact electrical tolerances and packaging specifications. Confirm component availability status as supply conditions may vary by region. Ensure compliance with RoHS directives and check for end-of-life notifications prior to final design implementation.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a 25 V rating and approximately 7 A continuous current capability in a small footprint. Evaluate the 23 mΩ Rds(on) against thermal constraints to ensure the 1.6 W power dissipation limit is not exceeded under peak load conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family of silicon MOSFETs designed for general-purpose power switching. The dual configuration allows for space-constrained designs where multiple switches are needed without increasing board area significantly compared to discrete single-channel alternatives.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the 25 V Vds, 7 A Id, and compatible MicroFET-8 pinout to guarantee mechanical and electrical interchangeability.