FDMB3900AN

FET, MOSFET Arrays Overview

The FDMB3900AN is a dual N-channel enhancement mode MOSFET from onsemi's PowerTrench series. It features a MicroFET-8 (8-MLP, 3x1.9 mm) surface-mount package. Key electrical parameters include a drain-source voltage (Vdss) of 25 V and a continuous drain current (Id) of 7 A at 25°C. The maximum on-resistance (Rds(on)) is 23 mΩ at Vgs = 10 V and Id = 7 A. The gate threshold voltage (Vgs(th)) is 3 V max at 250 µA, with a gate charge (Qg) of 17 nC at 10 V. Input capacitance (Ciss) is 890 pF at 13 V. The device supports a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 800 mW.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact MicroFET-8 package for space-constrained designs.
• Logic-level gate drive capability with low gate charge for efficient switching.
• Low on-resistance optimized for high-current applications within a 25 V rating.

FET, MOSFET Arrays Applications

• Power management circuits requiring dual low-side switching.
• Battery protection modules utilizing compact surface-mount technology.
• DC-DC converter output stages in portable electronic devices.

FET, MOSFET Arrays Procurement Notes

Verify component status carefully as the FDMB3900AN is officially listed as obsolete by onsemi. Production was discontinued with an Obsolete Notice dated December 15, 2022. Sourcing should focus on remaining stock or authorized distributors holding legacy inventory. Confirm RoHS compliance and REACH status through official documentation before integration into new designs.

FET, MOSFET Arrays Selection Notes

Select this component only if the 25 V voltage rating and 7 A current capacity align with system requirements. The 8-MLP MicroFET package offers thermal performance suitable for moderate power dissipation up to 800 mW. Consider the logic-level gate threshold for compatibility with standard control voltages. Due to its obsolete status, evaluate long-term supply chain stability and potential redesign needs for future production runs.

FET, MOSFET Arrays Part Context

The FDMB3900AN belongs to onsemi's PowerTrench family of MOSFETs, known for low Rds(on) and fast switching characteristics. It is part of the FDMB3900 series, designed for general-purpose switching applications. The device utilizes silicon technology and is housed in an 8-PowerWDFN supplier package. It is distinct from higher-voltage or single-channel variants within the broader transistor portfolio.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Given the obsolete status, engineers must identify equivalent components based on matching electrical parameters (25 V, 7 A, Dual N-Channel) and package dimensions (MicroFET-8). Verify pinout compatibility and thermal characteristics when selecting alternative sources.