FDMC010N08LC

Description：MOSFET N-CH 80V 11A/50A 8PQFN
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:f86dd56c6b2c Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FDMC010N08LC is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 80V 11A/50A 8PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDMC010N08LC

Description：MOSFET N-CH 80V 11A/50A 8PQFN
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10.9mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：3V @ 90µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2135 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta), 52W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-PQFN (3.3x3.3)
Package / Case：8-PowerWDFN

Single FETs, MOSFETs datasheet and documents for FDMC010N08LC

FDMC010N08LC

Single FETs, MOSFETs Overview

The FDMC010N08LC is an N-Channel MV MOSFET manufactured by onsemi using the advanced PowerTrench process with Shielded Gate technology. It features a maximum drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 11 A at ambient temperature or 50 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 10.9 mΩ at Vgs = 10 V and 18.4 mΩ at Vgs = 4.5 V. It is housed in an 8-PQFN surface-mount package, offering thermal dissipation capabilities of 2.3 W at ambient and 52 W at case temperatures.

Single FETs, MOSFETs Feature Summary

Utilizes PowerTrench process with Shielded Gate technology to minimize on-resistance while maintaining superior switching performance.

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors. Confirm datasheet revisions match production lot dates. Ensure storage conditions adhere to moisture sensitivity level requirements. Validate pinout compatibility during PCB layout integration. Check for end-of-life status as some sources indicate scheduled obsolescence.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses in compact designs. The 8-PQFN package suits space-constrained surface-mount layouts. Evaluate thermal management needs based on 2.3 W ambient dissipation limits. Consider gate drive voltage requirements given the Rds(on) specifications at 4.5 V and 10 V.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's PowerTrench family of N-Channel MOSFETs. It shares design heritage with variants like FDMC010N08C but differs in packaging. The series emphasizes efficiency through optimized trench gate structures. It targets general-purpose power switching in consumer and industrial electronics.