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FDMC8200 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 8A/12A 8PWR33. Review the specifications below when checking this part for your BOM.
The FDMC8200S is a dual N-channel PowerTrench MOSFET from onsemi, housed in an 8-pin Power-33-8 surface-mount package. It features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 18 A to 23 A depending on thermal conditions. The device exhibits a low on-resistance ranging from 13.5 mΩ to 20 mΩ. Gate-source voltage limits are specified at ±20 V with a threshold voltage of approximately 1 V. Thermal performance includes a power dissipation capacity between 1.9 W and 2.5 W, operating within a temperature range of -55°C to +150°C.
Verify the specific suffix (e.g., F065) against the required datasheet revision, as packaging and minor electrical tolerances may vary. Confirm availability status, as some variants are marked as obsolete or not recommended for new designs. Ensure compliance with RoHS directives by checking the material composition documentation provided by onsemi before finalizing procurement orders.
Select this component when a dual N-channel solution is required in a small footprint. Compare Rds(on) values against thermal constraints to ensure adequate heat dissipation without external heatsinks. Verify that the 30 V rating exceeds the maximum circuit voltage with sufficient margin. Consider the gate charge specifications if high-frequency switching is intended to minimize driver losses.
This part belongs to onsemi's PowerTrench family, designed for general-purpose power switching. It shares the Power-33-8 package form factor with other low-voltage MOSFETs like the FDMC7582 and FDMC6675BZ, facilitating board layout reuse across different voltage and current ratings within the same product line.
Direct substitutes include the FDMC8200S_F065 variant. Other compatible options in the same package include the FDMC8097AC for mixed N/P-channel needs, though electrical parameters differ significantly.
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