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FDMC8200S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 6A/8.5A 8PWR33. Review the specifications below when checking this part for your BOM.
The FDMC8200S is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features a Power-33-8 surface-mount package with an 8-pin configuration. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 18 A. The device exhibits a maximum on-resistance (Rds On) of 20 mOhms. Gate-source voltage limits range from -20 V to +20 V, with a typical threshold voltage of 1 V. Total gate charge (Qg) values are specified at 7.5 nC and 15.7 nC under different conditions. Power dissipation capabilities are rated at 1.9 W and 2.5 W. Operating temperatures span from -55 °C to +150 °C.
Verify the specific ordering suffix and manufacturing origin when sourcing components. Confirm RoHS compliance status through official documentation. Check for product change notifications regarding pinout or material updates. Ensure the supplier provides valid traceability records for quality assurance purposes.
Select this component based on its 30 V voltage rating and 18 A current capacity. Evaluate thermal management requirements given the 1.9 W to 2.5 W power dissipation limits. Consider the Power-33-8 package dimensions for PCB layout constraints. Verify gate charge specifications against driver capability for optimal switching speeds.
This part belongs to the FDMC8200S series of dual N-channel MOSFETs. It is part of onsemi's PowerTrench lineup, which focuses on high-efficiency power switching solutions. The device utilizes silicon technology and is designed for surface-mount assembly in compact electronic designs.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference guides for compatible alternatives with matching electrical and mechanical specifications.
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