FET, MOSFET Arrays FDMC8200S product image

FDMC8200S

$1.50
  • Description:MOSFET 2N-CH 30V 6A/8.5A 8PWR33
  • Series:PowerTrench®

SKU:fef48bfafb53 Category: Brand:

  
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FDMC8200S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 6A/8.5A 8PWR33. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMC8200S

  • Description:MOSFET 2N-CH 30V 6A/8.5A 8PWR33
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6A, 8.5A
  • Rds On (Max) @ Id, Vgs:20mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:660pF @ 15V
  • Power - Max:700mW, 1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerWDFN
  • Supplier Device Package:8-Power33 (3x3)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMC8200S

FDMC8200S

FET, MOSFET Arrays Overview

The FDMC8200S is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features a Power-33-8 surface-mount package with an 8-pin configuration. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 18 A. The device exhibits a maximum on-resistance (Rds On) of 20 mOhms. Gate-source voltage limits range from -20 V to +20 V, with a typical threshold voltage of 1 V. Total gate charge (Qg) values are specified at 7.5 nC and 15.7 nC under different conditions. Power dissipation capabilities are rated at 1.9 W and 2.5 W. Operating temperatures span from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

  • Dual asymmetric triple drain and triple source configuration for efficient power switching.
  • PowerTrench technology designed for low on-resistance and high-speed performance.
  • Enhancement mode operation suitable for synchronous rectification applications.

FET, MOSFET Arrays Applications

  • DC-DC converter circuits requiring low-side or high-side switching.
  • Synchronous rectification in point-of-load power supplies.
  • Automotive electronic control units and lighting systems.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and manufacturing origin when sourcing components. Confirm RoHS compliance status through official documentation. Check for product change notifications regarding pinout or material updates. Ensure the supplier provides valid traceability records for quality assurance purposes.

FET, MOSFET Arrays Selection Notes

Select this component based on its 30 V voltage rating and 18 A current capacity. Evaluate thermal management requirements given the 1.9 W to 2.5 W power dissipation limits. Consider the Power-33-8 package dimensions for PCB layout constraints. Verify gate charge specifications against driver capability for optimal switching speeds.

FET, MOSFET Arrays Part Context

This part belongs to the FDMC8200S series of dual N-channel MOSFETs. It is part of onsemi's PowerTrench lineup, which focuses on high-efficiency power switching solutions. The device utilizes silicon technology and is designed for surface-mount assembly in compact electronic designs.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference guides for compatible alternatives with matching electrical and mechanical specifications.

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