FDMD8240LET40

FET, MOSFET Arrays Overview

The FDMD8240LET40 is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features a 40V drain-source voltage rating and a continuous drain current of 24A at 25°C. The device exhibits a maximum on-resistance of 2.6mΩ at 23A and 10V gate drive. Key electrical parameters include a maximum gate charge of 56nC at 10V, an input capacitance of 4230pF at 20V, and a maximum gate-source threshold voltage of 3V at 250µA. It supports a junction temperature range from -55°C to 175°C with a maximum power dissipation of 50W. The component is housed in a 12-PowerWDFN surface-mount package.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel Configuration
• PowerTrench Technology
• Surface Mount Package

FET, MOSFET Arrays Applications

• DC-DC Converters
• Motor Control
• Load Switching

FET, MOSFET Arrays Procurement Notes

Verify the obsolete status of this component before design finalization. Confirm that the specific ordering suffix matches the required tape and reel packaging format. Ensure compatibility with existing supply chains for end-of-life management strategies.

FET, MOSFET Arrays Selection Notes

Select this part for low-side switching applications requiring high efficiency within a compact footprint. Evaluate thermal performance against the 50W dissipation limit under actual operating conditions. Compare gate charge requirements with driver capabilities to ensure adequate switching speeds.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of MOSFETs designed for power management applications. It utilizes advanced trench technology to achieve low on-resistance and fast switching characteristics. The dual configuration allows for bridge or half-bridge topologies in a single package.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives with similar Rds(on) and Vgs(th) specifications. Verify that any substitute maintains the same 12-PowerWDFN package dimensions and thermal pad layout.