FDMD8260L

FET, MOSFET Arrays Overview

The FDMD8260L is a dual N-channel MOSFET array from onsemi, housed in a compact Power3.3x5 (12-Power) surface-mount package. It integrates two 60V devices with internally connected high-side source and low-side drain terminals, facilitating half-bridge and full-bridge configurations. Key electrical parameters include a continuous drain current of 15A per channel, a maximum pulsed drain current of 293A, and a power dissipation rating of 37W. The device features low gate resistance for fast switching, with rise and fall times specified at 10 ns and 11 ns respectively.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with internal high-side source to low-side drain connection for bridge applications
• Low source inductance package design to minimize parasitic effects
• Optimized for high-voltage operation and withstands fast switching stresses
• Low Rg architecture enabling rapid switching performance

FET, MOSFET Arrays Applications

• Half-bridge circuit implementations
• Full-bridge motor drive systems
• High-voltage power conversion stages
• Fast-switching load driver applications

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer part number against official onsemi documentation to confirm availability status. Note that this component may be listed as obsolete or end-of-life in certain distributor catalogs. Ensure compatibility with required voltage and current ratings before procurement. Cross-reference datasheet specifications for thermal management requirements and mounting guidelines to ensure reliable integration into the target system design.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for bridge topologies. The internal connection simplifies layout by reducing external component count. Consider the 60V rating and 15A continuous current limits relative to the application's peak loads. The Power3.3x5 package offers a small footprint suitable for space-constrained designs requiring efficient thermal performance and low parasitic inductance.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's PowerTrench series, which focuses on optimized silicon die technology for low on-resistance and gate charge figures of merit. The FDMD8260L specifically targets applications demanding high efficiency and fast dynamic response in a minimal board area. It represents a specialized array solution rather than a single discrete transistor, offering integrated functionality for complementary switching pairs.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same Power3.3x5 family. Verify that any substitute maintains the 60V breakdown voltage and similar switching characteristics. Ensure the replacement supports the required bridge configuration without additional external wiring modifications.