FDMD8260LET60

FET, MOSFET Arrays Overview

The FDMD8260LET60 is a dual N-channel PowerTrench MOSFET from onsemi, designed for high-efficiency power switching applications. It integrates two independent channels within a single compact package to minimize board space and parasitic inductance. The device features low on-resistance and optimized gate charge characteristics, supporting fast switching speeds while maintaining thermal stability under continuous operation.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for synchronized switching operations
• Low on-resistance to reduce conduction losses
• Optimized gate charge for efficient drive requirements
• Compact surface-mount packaging for space-constrained designs

FET, MOSFET Arrays Applications

• DC-DC converter modules
• Power distribution networks
• Motor control circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix LET60 against official datasheets to confirm tape-and-reel packaging and quantity specifications. Ensure compliance with RoHS directives by checking the material composition declaration. Confirm availability status directly with authorized distributors as supply levels may fluctuate.

FET, MOSFET Arrays Selection Notes

Select this component when dual-channel isolation or synchronized switching is required in a minimal footprint. Evaluate thermal performance based on the specific PCB copper area and ambient conditions. Compare gate charge parameters against available driver capabilities to ensure optimal switching efficiency and minimize cross-conduction risks.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family of MOSFETs, known for advanced trench technology that delivers superior on-resistance per unit area. The dual configuration allows designers to implement half-bridge or synchronous rectifier topologies efficiently, reducing component count compared to discrete single-channel solutions.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for equivalent dual N-channel MOSFETs with matching voltage ratings and current capabilities. Verify pin compatibility and thermal resistance values before replacing existing designs.