FDMD8430

FET, MOSFET Arrays Overview

The FDMD8430 is a dual N-channel enhancement-mode MOSFET from the PowerTrench series, housed in an 8-pin PQFN (Power 3.3x5) package. It integrates two devices in a common-source configuration to minimize parasitics and optimize thermal performance. Key electrical parameters include a maximum drain-to-source voltage of 30 V, a continuous drain current of 28 A at 25°C ambient temperature, and a static on-resistance of 2.12 mΩ at VGS = 10 V. The device operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Integrates two N-Channel devices in a common-source configuration for optimized thermal path and low package parasitics.
• Features a compact 3.3 x 5 mm footprint designed for higher power density applications.
• Terminations are lead-free and RoHS compliant.

FET, MOSFET Arrays Applications

• Isolated DC-DC synchronous rectifiers
• Common ground load switches

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct reel size and tape width specifications. Confirm that the component meets all required environmental standards and compliance certifications relevant to the target application before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring low on-resistance and high current handling in a small form factor. Evaluate the thermal resistance characteristics and safe operating area limits to ensure the device can handle the expected peak transient power and continuous current loads under the specific board layout conditions.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of discrete semiconductors manufactured by onsemi. It utilizes advanced trench gate technology to achieve superior RDS(on) performance compared to standard planar MOSFETs. The dual configuration allows for efficient implementation in bridge or synchronous rectification topologies where space constraints are critical.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 30V rating, dual N-channel configuration, and compatible package dimensions. Verify that alternative components offer equal or lower on-resistance and similar thermal characteristics to maintain system efficiency and reliability without redesigning the PCB footprint.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current at an ambient temperature of 25°C?

The maximum continuous drain current is 28 A at an ambient temperature of 25°C.

How is the internal structure configured?

The package integrates two N-Channel devices connected internally in a common-source configuration.

What is the typical reverse recovery time for the body diode?

The typical reverse recovery time is 40 ns when tested with a forward current of 28 A and a di/dt of 100 A/µs.