FET, MOSFET Arrays FDMD8530 product image

FDMD8530

$0.79
  • Description:MOSFET 2N-CH 30V 35A POWER56
  • Series:PowerTrench®

SKU:195e9784ac55 Category: Brand:

  
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FDMD8530 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 35A POWER56. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMD8530

  • Description:MOSFET 2N-CH 30V 35A POWER56
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:35A
  • Rds On (Max) @ Id, Vgs:1.25mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:149nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:10395pF @ 15V
  • Power - Max:2.2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerWDFN
  • Supplier Device Package:Power56
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMD8530

FDMD8530

FET, MOSFET Arrays Overview

The FDMD8530 is a dual N-channel Power MOSFET array manufactured by onsemi, belonging to the PowerTrench series. It features a maximum drain-source voltage of 30V and a continuous drain current of 35A at 25°C. The device utilizes an 8-PowerWDFN (Power56) surface-mount package with a maximum power dissipation of 2.2W. Key electrical parameters include a gate threshold voltage of 3V at 250µA, a maximum gate charge of 149nC at 10V, and an input capacitance of 10395pF at 15V. The on-resistance is specified as 1.25mΩ at 35A and 10V. Operating junction temperature ranges from -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration integrated into a single compact Power56 package for space-efficient designs.
  • Low on-resistance characteristic optimized for high-current switching applications.
  • Surface-mount construction suitable for automated assembly processes.

FET, MOSFET Arrays Applications

  • DC-DC converter circuits requiring low-side or high-side switching.
  • Motor control systems utilizing dual-channel architectures.
  • Load switching applications in consumer electronics.

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors due to the part's end-of-life status. Confirm RoHS compliance documentation and material composition declarations are available from the manufacturer. Check for alternative sourcing channels as standard inventory may be limited. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET array is required within a 30V voltage rating. Evaluate thermal management capabilities carefully given the 2.2W power dissipation limit in the Power56 package. Compare gate charge and input capacitance values against driver capabilities to ensure efficient switching performance. Verify that the 35A current rating meets the specific load requirements under expected operating temperatures.

FET, MOSFET Arrays Part Context

The FDMD8530 belongs to the FDMD85 family of dual MOSFET arrays produced by onsemi. This series integrates two N-channel devices into a single footprint to reduce board space. The PowerTrench technology focuses on minimizing on-resistance while maintaining robust switching characteristics. This specific model represents a lower-voltage option within the broader portfolio of power discrete semiconductors offered by the manufacturer.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult onsemi technical support for verified alternatives compatible with the Power56 package and electrical specifications.

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