FDMD86100

FET, MOSFET Arrays Overview

The FDMD86100 is a dual N-Channel Shielded Gate PowerTrench MOSFET manufactured by onsemi. It integrates two N-channel devices in a common-source configuration within an 8-pin PQFN package (Power-56-8). The component features a drain-source voltage rating of 100 V and a continuous drain current of 10 A. Key electrical specifications include a maximum on-resistance of 2.2 Ω per channel, a gate charge of 43 nC at 10 V, and a power dissipation capacity of 2.5 W. The device operates within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Integrates two N-Channel devices in a common-source configuration to eliminate PCB routing complexity.
• Incorporates Shielded Gate technology for enhanced switching performance and reliability.
• Features a large source pad on the bottom of the package to provide enhanced thermal management.

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring compact dual-switch configurations
• Motor control applications utilizing half-bridge topologies
• Power management systems with space-constrained layouts

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and tape/reel quantity requirements against the official onsemi datasheet before procurement. Confirm that the 8-pin Power-56-8 package dimensions align with your PCB footprint design. Ensure thermal relief plans account for the 2.5 W power dissipation limit and the large exposed pad requirement for adequate heat sinking.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-Channel MOSFET solution is required to simplify board layout by removing external gate resistors or interconnects between switches. The Shielded Gate technology offers advantages in switching efficiency compared to standard planar structures. Consider the 100 V voltage rating and 10 A current capability to ensure sufficient headroom for the target application's peak loads.

FET, MOSFET Arrays Part Context

The FDMD86100 belongs to onsemi’s PowerTrench family of MOSFETs, which are designed for high-efficiency power switching applications. This specific part differentiates itself by integrating two channels into a single surface-mount package, reducing component count and parasitic inductance associated with discrete dual setups. It targets designs where thermal performance and layout density are critical constraints.

FET, MOSFET Arrays Replacement Considerations

Direct pin-to-pin replacements must match the 8-pin PQFN (Power-56-8) outline and the 100 V/10 A electrical ratings. Verify that substitute components also feature Shielded Gate technology if switching speed and efficiency are primary selection criteria. Cross-reference the on-resistance and gate charge parameters to ensure equivalent thermal and drive characteristics.