FET, MOSFET Arrays FDME1024NZT product image

FDME1024NZT

$0.83
  • Description:MOSFET 2N-CH 20V 3.8A 6MICROFET
  • Series:PowerTrench®

SKU:cfdd7ddf22ae Category: Brand:

  
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FDME1024NZT is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 3.8A 6MICROFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDME1024NZT

  • Description:MOSFET 2N-CH 20V 3.8A 6MICROFET
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:3.8A
  • Rds On (Max) @ Id, Vgs:66mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:300pF @ 10V
  • Power - Max:600mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UFDFN Exposed Pad
  • Supplier Device Package:6-MicroFET (1.6x1.6)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDME1024NZT

FDME1024NZT

FET, MOSFET Arrays Overview

The FDME1024NZT is a dual N-channel PowerTrench MOSFET from onsemi, packaged in a MicroFET 1.6x1.6 mm thin profile. It integrates two independent N-channel devices within a single compact footprint, designed to minimize board space in mobile applications. Key electrical parameters include a drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 3.8 A per channel. The device features a low maximum on-resistance (Rds(on)) of 66 mΩ at Vgs = 4.5 V, ensuring minimal conduction losses. Gate charge (Qg) is typically 3 nC at Vgs = 4.5 V, supporting efficient switching. The package supports a maximum power dissipation of 1.4 W, with an operating temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

  • Integrates two independent N-channel MOSFETs in a single ultra-thin MicroFET package for space-constrained designs.
  • Features low on-resistance to minimize conduction losses in high-efficiency power paths.
  • Optimized gate charge characteristics facilitate fast switching speeds suitable for portable electronics.

FET, MOSFET Arrays Applications

  • Mobile phone battery protection and charging circuits
  • Ultra-portable consumer electronic devices requiring dual-switch solutions
  • Power management units in handheld gadgets

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and tape/reel configuration when sourcing components. Confirm that the received parts match the FDME1024NZT designation exactly, as minor suffix variations may indicate different packaging or testing criteria. Ensure suppliers provide valid origin documentation to guarantee authenticity and traceability for critical mobile hardware assemblies.

FET, MOSFET Arrays Selection Notes

Select this component when a dual-switch topology is required within strict spatial limitations typical of modern smartphones. The 20 V rating and 3.8 A current capacity suit low-voltage battery systems. Consider the 66 mΩ Rds(on) for thermal efficiency in dense PCB layouts where heat dissipation is challenging due to the small package size.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench series, focusing on low-loss switching performance. It is categorized under discrete semiconductor arrays, specifically dual MOSFETs. The MicroFET package represents a trend toward miniaturization in consumer electronics, allowing manufacturers to reduce overall module footprints while maintaining robust electrical performance standards.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Engineers should consult official cross-reference tools or contact onsemi directly for validated alternatives that meet identical pinout and electrical specifications.

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