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FDME1034CZT is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 3.8A 6MICROFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDME1034CZT
- Description：MOSFET N/P-CH 20V 3.8A 6MICROFET
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.8A, 2.6A
- Rds On (Max) @ Id, Vgs：66mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：300pF @ 10V
- Power - Max：600mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-MicroFET (1.6x1.6)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDME1034CZT
FET, MOSFET Arrays Overview
The FDME1034CZT is a complementary PowerTrench MOSFET array featuring independent N-Channel and P-Channel devices in a MicroFET-6 package. The N-Channel variant supports 20 V and 3.8 A with an on-resistance of 66 mΩ. The P-Channel variant operates at -20 V and -2.6 A with an on-resistance of 142 mΩ. Maximum power dissipation is 600 mW, with gate charge of 4.2 nC @ 4.5V and input capacitance of 300 pF @ 10V.
FET, MOSFET Arrays Feature Summary
- Complementary dual MOSFET configuration with independent N-Channel and P-Channel elements
- Low on-state resistance for efficient power switching
- Optimized for high-speed switching applications
FET, MOSFET Arrays Applications
- High-speed switching circuits
- Power management modules requiring complementary FETs
- Applications subject to high current stress
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the MicroFET-6 package dimensions and thermal requirements align with the target PCB layout and system constraints to ensure reliable operation under specified load conditions.
FET, MOSFET Arrays Selection Notes
Select this component when a compact complementary pair is required for low-voltage, high-current switching. The low gate charge facilitates fast transitions, while the integrated design reduces board space compared to discrete solutions. Ensure the application voltage does not exceed the 20 V rating for either channel.
FET, MOSFET Arrays Part Context
Part of onsemi's PowerTrench lineup, designed for efficiency in power conversion. The complementary nature allows for simplified driver circuitry in half-bridge or push-pull configurations. It serves as a specialized solution for applications needing matched N and P-channel performance in a minimal footprint.
FET, MOSFET Arrays Replacement Considerations
Direct substitutes require matching the 20 V/3.8 A (N) and -20 V/-2.6 A (P) ratings within the MicroFET-6 package. Verify on-resistance and gate charge specifications to maintain switching speed and thermal performance equivalence.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
