FET, MOSFET Arrays FDMJ1023PZ product image

FDMJ1023PZ

  • Description:MOSFET 2P-CH 20V 2.9A SC75
  • Series:PowerTrench®

SKU:7710b946d6eb Category: Brand:

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FDMJ1023PZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 2.9A SC75. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMJ1023PZ

  • Description:MOSFET 2P-CH 20V 2.9A SC75
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.9A
  • Rds On (Max) @ Id, Vgs:112mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:400pF @ 10V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-WFDFN Exposed Pad
  • Supplier Device Package:SC-75, MicroFET
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMJ1023PZ

FDMJ1023PZ

FET, MOSFET Arrays Overview

The FDMJ1023PZ is a P-Channel PowerTrench MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 830mA at 25°C. The device exhibits a maximum gate-source threshold voltage of 1V at 250uA and a typical on-resistance (Rds(on)) of 500mΩ at 4.5V gate drive with 830mA current. Maximum power dissipation is rated at 625mW at 25°C ambient temperature. The component utilizes SC-75 packaging and integrates a built-in diode within a single configuration.

FET, MOSFET Arrays Feature Summary

  • Utilizes advanced PowerTrench technology to achieve significantly reduced on-resistance compared to standard solutions.
  • Operates effectively with low gate drive voltages starting from 1.5V, facilitating compatibility with various logic levels.
  • Offers improved thermal performance through reduced thermal resistance relative to alternative discrete components.

FET, MOSFET Arrays Applications

  • Low-power synchronous DC/DC converters
  • Load switching applications in portable electronics
  • Battery charging circuits

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation carefully, as the part originates from Fairchild Semiconductor which was acquired by onsemi. Confirm that the specific ordering suffix matches the required package variant. Ensure compliance with RoHS directives if applicable to the target assembly process. Cross-reference the datasheet revision date to confirm parameter consistency with current production standards.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a compact P-Channel MOSFET with low gate charge and high efficiency at low voltages. The 20V rating suits battery-powered systems. Evaluate the thermal resistance specifications against the expected power dissipation in the final enclosure. Consider the 1.5V minimum gate drive requirement when designing the control logic interface.

FET, MOSFET Arrays Part Context

This device belongs to the MicroFET Power Switch family introduced by Fairchild Semiconductor. It represents an evolution in small-signal power management, focusing on minimizing footprint while maintaining robust switching capabilities. The integration of PowerTrench technology distinguishes it from earlier generations of surface-mount MOSFETs in similar packages.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include other 20V P-Channel MOSFETs in SC-75 or SOT-523 packages from onsemi or other manufacturers. Verify pinout compatibility and ensure Rds(on) and Vgs(th) parameters meet or exceed the original specifications for equivalent circuit performance.

FDMJ1023PZFDMJ1023PZ

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