FDMJ1032C

FET, MOSFET Arrays Overview

The FDMJ1032C is a dual N and P-Channel enhancement mode Power MOSFET manufactured by onsemi using the PowerTrench process. It integrates an N-Channel (Q1) rated at 20V, 3.2A with a maximum rDS(on) of 90mΩ at VGS=4.5V, and a P-Channel (Q2) rated at -20V, -2.5A with a maximum rDS(on) of 160mΩ at VGS=-4.5V. The device operates within a junction temperature range of -55°C to +150°C and is housed in an SC-75 MicroFET package.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating complementary N and P-channel transistors for space-efficient circuit design
• Optimized PowerTrench technology designed to minimize on-state resistance while maintaining superior switching performance
• Low gate charge characteristics supporting high power and current handling capabilities

FET, MOSFET Arrays Applications

• Battery management systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status as indicated in official documentation. Ensure proper ESD handling protocols are followed during storage and assembly due to the sensitivity of MOSFET gate structures.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring compact dual-channel solutions. Evaluate thermal constraints based on the specified RθJA values under single operation conditions. Verify that gate drive voltages align with the threshold requirements for both N and P channels to ensure optimal conduction.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of MOSFETs produced by Fairchild Semiconductor, now part of onsemi. It utilizes advanced silicon processes tailored for low on-resistance and efficient switching in small surface-mount packages.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other dual N/P MOSFETs in SC-75 packages with comparable voltage and current ratings. Verify pinout compatibility and electrical parameters such as rDS(on) and gate charge before implementation.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the N-Channel?

The maximum continuous drain current for the N-Channel (Q1) is 3.2A at TA = 25°C.

What is the gate-to-source voltage rating for the P-Channel?

The maximum gate-to-source voltage rating for the P-Channel (Q2) is ±8V.

Does the device support body diode reverse recovery?

Yes, the device includes source-to-drain diodes with specified reverse recovery times (trr) of 12ns for Q1 and 14ns for Q2.