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FDML7610AS is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DUAL N-CH. ER TRENCH MO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDML7610AS
- Description：DUAL N-CH. ER TRENCH MO
- Series：*
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDML7610AS
FET, MOSFET Arrays Overview
The FDML7610AS is a dual N-channel PowerTrench MOSFET from onsemi, designed for high-efficiency synchronous rectification and low-side switching applications. It utilizes Shielded Gate Technology to achieve low gate charge and minimal on-resistance. The device features a maximum drain-source voltage of 100V and a continuous drain current of 58A at 25°C case temperature. Packaged in a compact SuperSOT-6 surface-mount format, it supports automated assembly processes while maintaining robust thermal performance for power management circuits.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration within a single package
- Shielded Gate Technology for optimized switching performance
- Low on-resistance for reduced conduction losses
- SuperSOT-6 package for space-constrained designs
FET, MOSFET Arrays Applications
- Synchronous rectification in DC/DC converters
- Low-side switching in motor control circuits
- Power management modules for computing equipment
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against the manufacturer datasheet to confirm package type and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels. Cross-reference the part number with official onsemi documentation to validate active status and compliance with current environmental standards before procurement.
FET, MOSFET Arrays Selection Notes
Select this component based on the required 100V breakdown voltage and 58A continuous current capability. Evaluate the thermal resistance characteristics relative to the intended PCB layout and cooling strategy. Confirm that the gate charge parameters align with the driving circuit's speed requirements for efficient operation in high-frequency switching environments.
FET, MOSFET Arrays Part Context
This component belongs to onsemi's PowerTrench family, which integrates Shielded Gate Technology to enhance efficiency. The SuperSOT-6 package provides a small footprint suitable for dense board layouts. It serves as a discrete solution for replacing larger multi-fet assemblies in modern power supply designs requiring high current density.
FET, MOSFET Arrays Replacement Considerations
Consult the official onsemi replacement guide for verified equivalents. Ensure any substitute maintains identical pinout compatibility and meets or exceeds the original electrical ratings for voltage, current, and thermal performance.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
