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FDML7610S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 12A/17A 8MLP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDML7610S
- Description：MOSFET 2N-CH 30V 12A/17A 8MLP
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：12A, 17A
- Rds On (Max) @ Id, Vgs：7.5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1750pF @ 15V
- Power - Max：800mW, 900mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-MLP (3x4.5)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDML7610S
FET, MOSFET Arrays Overview
The FDML7610S is a dual N-Channel PowerTrench MOSFET from onsemi, designed for surface-mount applications. It features a 30 V drain-source breakdown voltage and a continuous drain current of 30 A. The device exhibits a maximum on-resistance (Rds On) of 7.5 mOhms. Gate-source voltage limits are specified at ±20 V, with a threshold voltage of 1 V. Total gate charge ranges from 28 nC to 60 nC. The component operates within a temperature range of -55 °C to +150 °C and has a power dissipation rating of 2.2 W. It is housed in the Power-3x45-8 package.
FET, MOSFET Arrays Feature Summary
- Dual N-Channel configuration integrated into a single compact package
- PowerTrench technology optimized for low on-resistance performance
- Enhancement mode operation suitable for high-speed switching applications
FET, MOSFET Arrays Applications
- Gaming desktops and notebooks
- NVDC server power stages
- General-purpose DC-DC conversion
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against official onsemi documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's datasheet or certification documents before finalizing procurement plans.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-Channel topology is required within a 30 V system. Ensure the thermal design accommodates the 2.2 W power dissipation limit. Verify that the 7.5 mOhm on-resistance meets the efficiency requirements for the target load current.
FET, MOSFET Arrays Part Context
This part belongs to the FDML series of dual MOSFETs from onsemi. It utilizes the PowerTrench platform, which focuses on minimizing conduction losses. The dual-channel design allows for efficient half-bridge or synchronous rectifier configurations in space-constrained power supply designs.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the 30 V Vds rating, dual N-Channel configuration, and compatible Power-3x45-8 footprint.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
