FDMQ8203

FET, MOSFET Arrays Overview

The FDMQ8203 is a dual N-channel and dual P-channel PowerTrench MOSFET from onsemi, designed for high-efficiency bridge rectifier applications. The N-channel devices feature a 100V drain-source voltage rating with a maximum continuous current of 6A and an on-resistance of 110 mΩ. The complementary P-channel devices are rated at -80V, supporting 6A continuous current with an on-resistance of 190 mΩ. This integrated configuration simplifies synchronous rectification designs by combining complementary channels in a single package.

FET, MOSFET Arrays Feature Summary

• Integrated dual N-channel and dual P-channel architecture for simplified bridge rectifier implementation
• PowerTrench technology optimized for low conduction losses and high efficiency
• Designed specifically for synchronous rectification in power supply circuits

FET, MOSFET Arrays Applications

• Synchronous rectification in DC-DC converters
• High-efficiency bridge rectifier circuits
• Point-of-load power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to confirm the exact tape and reel quantity or packaging variant required for your assembly line. Confirm that the component meets RoHS compliance standards if environmental regulations apply to your manufacturing process. Ensure the datasheet revision matches your design specifications before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a compact solution for synchronous rectification is needed, replacing discrete MOSFETs to save board space. The complementary N-channel and P-channel pairing eliminates the need for separate gate drive logic complexity associated with standard half-bridge configurations. Verify thermal requirements as the device handles significant current density within its footprint.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's GreenBridge series, which focuses on high-efficiency power solutions. It integrates complementary MOSFETs to replace traditional diode bridges or discrete transistor pairs in synchronous rectifier topologies. The PowerTrench technology ensures robust performance in switching applications requiring low on-state resistance.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the dual N/P-channel configuration and similar voltage/current ratings. Check pinout compatibility carefully as internal channel arrangements may differ between manufacturers. Verify that substitute components meet the same thermal dissipation capabilities and switching speed requirements.