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FDMS1D2N03DSD is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 19A 8PQFN. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDMS1D2N03DSD
- Description：MOSFET 2N-CH 30V 19A 8PQFN
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
- Rds On (Max) @ Id, Vgs：3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 320µA, 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V, 117nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1410pF @ 15V, 4860pF @ 15V
- Power - Max：2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PQFN (5x6)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDMS1D2N03DSD
FET, MOSFET Arrays Overview
The FDMS1D2N03DSD is a PowerTrench MOSFET module from onsemi, featuring an N-channel enhancement mode field-effect transistor. It utilizes advanced trench technology to achieve low specific on-resistance and fast switching speeds. The device is housed in a compact DPAK package, designed for high-efficiency power conversion applications. Key electrical characteristics include a drain-source voltage rating of 30V and a continuous drain current capability optimized for space-constrained designs. The module integrates thermal management features to support reliable operation under varying load conditions.
FET, MOSFET Arrays Feature Summary
- Advanced trench gate technology for enhanced performance
- Low on-resistance for improved efficiency
- Fast switching capabilities for high-frequency applications
- Compact DPAK package for space-saving integration
FET, MOSFET Arrays Applications
- DC-DC converters
- Power management circuits
- Load switches
FET, MOSFET Arrays Procurement Notes
Verify the exact ordering suffix and tape/reel specifications against the official datasheet before procurement. Confirm RoHS compliance status and material composition details directly with the manufacturer or authorized distributors. Ensure that the component matches the required package outline and marking codes for your specific assembly process.
FET, MOSFET Arrays Selection Notes
Select this component based on its 30V Vds rating and current handling capabilities relative to your circuit requirements. Consider the thermal resistance and package type for adequate heat dissipation in your design. Compare the on-resistance values with alternative devices to ensure optimal efficiency for your specific power application constraints.
FET, MOSFET Arrays Part Context
This part belongs to onsemi's PowerTrench MOSFET family, known for combining low on-resistance with robust avalanche ruggedness. The series targets applications requiring efficient power switching in compact form factors. It represents a standard solution for general-purpose power management tasks where size and efficiency are critical design parameters.
FET, MOSFET Arrays Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains similar Rds(on) and switching speed characteristics. Ensure the replacement package matches the footprint and thermal requirements of the existing design.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
