FDMS3600AS

FET, MOSFET Arrays Overview

The FDMS3600AS is a dual N-channel PowerTrench MOSFET from onsemi, housed in a Power-56-8 surface-mount package. It features an asymmetric design with distinct electrical characteristics for each channel. The device supports a drain-source voltage (Vds) of 25 V and operates within a temperature range of -55°C to +150°C. Key parameters include a continuous drain current (Id) of 15 A and 30 A, and a gate-source voltage (Vgs) rating of ±20 V. On-resistance values are specified at 5.6 mΩ and 1.6 mΩ, while gate charge (Qg) ranges from 27 nC to 82 nC depending on the channel configuration.

FET, MOSFET Arrays Feature Summary

• Asymmetric dual N-channel architecture providing optimized performance for synchronous rectification applications
• Enhancement mode operation compatible with standard logic-level driving requirements
• PowerTrench technology designed for low conduction losses and high efficiency

FET, MOSFET Arrays Applications

• Synchronous rectification in DC-DC converters
• Power stage implementation in power supply modules
• Low-voltage load switching circuits

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for end-of-life notices as availability may be restricted. Ensure storage conditions meet semiconductor handling standards to prevent damage prior to assembly.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a 25 V rated dual N-channel MOSFET in a compact Power-56-8 footprint. Evaluate thermal management capabilities given the 2.5 W power dissipation rating. Compare on-resistance and gate charge specifications against alternative devices to ensure compatibility with specific switching frequency and efficiency targets.

FET, MOSFET Arrays Part Context

The FDMS3600AS belongs to onsemi's PowerTrench series, which focuses on low-profile power MOSFETs for space-constrained applications. This specific model is part of the FDMS36xx family, characterized by its dual-channel configuration and asymmetric properties tailored for high-efficiency power conversion stages.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides or distributor databases for verified alternatives.