FDMS3606AS

FET, MOSFET Arrays Overview

The FDMS3606AS is a PowerTrench Power Stage asymmetric dual N-Channel MOSFET manufactured by onsemi. It integrates two specialized N-channel transistors within a single PQFN package to optimize synchronous buck converter designs. The device features an internal connection between the switch nodes, facilitating simplified PCB layout and routing. Key electrical specifications include a drain-source voltage (Vds) of 30 V. The control MOSFET (Q1) exhibits a maximum on-resistance (Rds(on)) of 8 mΩ at Vgs = 10 V and 11 A, while the synchronous SyncFET (Q2) offers a lower Rds(on) of 1.9 mΩ at Vgs = 10 V and 27 A. The component supports surface mount installation in a Power-56-8 package.

FET, MOSFET Arrays Feature Summary

• Asymmetric dual configuration with optimized control and synchronous FETs for enhanced power efficiency
• Internally connected switch node simplifies placement and routing for synchronous buck applications
• Low inductance packaging design reduces rise/fall times and switching losses
• Integrated MOSFET structure minimizes circuit inductance and suppresses switch node ringing

FET, MOSFET Arrays Applications

• Computing systems
• Communications infrastructure
• General purpose point of load regulation
• Notebook VCORE power stages
• Server power supplies

FET, MOSFET Arrays Procurement Notes

Verify current production status as the related FDMS3600AS model indicates end-of-life conditions. Confirm RoHS compliance documentation availability through official onsemi channels. Ensure the specific PQFN package variant matches the target footprint requirements. Validate that the 30 V rating aligns with the system's maximum operating voltage constraints before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when designing synchronous buck converters requiring integrated asymmetric MOSFETs. The internal switch node connection reduces external parasitic inductance compared to discrete solutions. Choose Q1 for high-side driving and Q2 for low-side synchronous rectification based on their respective Rds(on) characteristics. Ensure gate drive voltages remain within the specified limits to maintain optimal conduction performance.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench Power Stage family from onsemi, designed specifically for high-efficiency power conversion. It succeeds earlier Fairchild Semiconductor designs under the same naming convention. The asymmetric architecture distinguishes it from standard dual N-channel MOSFETs by tailoring each transistor for distinct roles within the power stage.

FET, MOSFET Arrays Replacement Considerations

The FDMS3600S serves as a similar 25 V variant within the same product family. Verify pinout compatibility and thermal performance metrics when substituting. Check datasheet revisions to ensure functional equivalence regarding switching speeds and on-resistance values.