FDMS3626S

FET, MOSFET Arrays Overview

The FDMS3626S is a dual N-channel enhancement mode MOSFET from onsemi's PowerStage PowerTrench series. It utilizes silicon technology and is housed in a Power-56-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 25 V and a continuous drain current (Id) of 25 A. Its maximum drain-source on-resistance (Rds On) is 5 mOhms. The gate-source voltage range is -12 V to +12 V, with a threshold voltage (Vgs th) between 800 mV and 1.1 V. Gate charge (Qg) ranges from 26 nC to 41 nC. The component operates within a temperature range of -55 °C to +150 °C and has a power dissipation rating of 2.5 W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for integrated circuit solutions
• Low on-resistance for efficient power handling
• Enhancement mode operation

FET, MOSFET Arrays Applications

• Power management circuits
• DC-DC converter designs
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and compliance documentation directly with onsemi or authorized distributors before procurement. Confirm that the Power-56-8 package dimensions match the target PCB footprint requirements. Ensure thermal management strategies align with the 2.5 W power dissipation specification under expected operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. The 25 V rating suits systems operating below this threshold. Consider the 5 mOhm resistance for efficiency needs. Verify that the 25 A current capability meets load demands without excessive heating.

FET, MOSFET Arrays Part Context

The FDMS3626S belongs to onsemi's PowerTrench family, designed for high-efficiency switching. It is part of the broader PowerStage lineup, which integrates multiple transistors to reduce board space. This specific model targets cost-sensitive, high-volume consumer and industrial electronics requiring reliable dual-channel performance.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same Power-56-8 package. Verify that any substitute maintains the 25 V Vds and comparable Rds On values. Ensure the replacement supports the required -55 °C to +150 °C operating temperature range.