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FDMS3660S-F121 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 13A/30A POWER56. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDMS3660S-F121
- Description：MOSFET 2N-CH 30V 13A/30A POWER56
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：13A, 30A
- Rds On (Max) @ Id, Vgs：8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1765pF @ 15V
- Power - Max：1W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：Power56
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDMS3660S-F121
FET, MOSFET Arrays Overview
The FDMS3660S-F121 is a dual N-channel PowerTrench MOSFET from onsemi, housed in an 8-lead Power-56-8 (PQFN) surface-mount package. It features asymmetric channel configurations with a drain-source breakdown voltage of 30 V. The device supports continuous drain currents of 13 A and 30 A for its respective channels, with corresponding on-resistances of 8 mΩ and 1.8 mΩ. Gate-source voltage limits range from -20 V to +20 V, with a threshold voltage of 1.1 V. Total gate charge values are specified as 29 nC and 87 nC. The component operates within a temperature range of -55 °C to +150 °C and dissipates up to 2.5 W.
FET, MOSFET Arrays Feature Summary
- Asymmetric dual N-channel architecture designed for optimized power stage efficiency
- PowerTrench technology providing low on-resistance for reduced conduction losses
- Enhancement mode operation compatible with standard logic-level driving requirements
FET, MOSFET Arrays Applications
- DC-DC converter power stages
- Motor control circuits
- Load switching applications
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix F121 against official manufacturer documentation to confirm tape-and-reel specifications and marking codes. Ensure compatibility with PCB footprint dimensions for the Power-56-8 package during procurement planning.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring a compact dual-NMOS solution with low Rds(on). Compare the asymmetric current ratings against load requirements to ensure adequate thermal headroom. Verify that the 30 V rating exceeds the maximum circuit voltage including transients.
FET, MOSFET Arrays Part Context
This part belongs to the FDMS3660 series of asymmetric dual MOSFETs. It shares the same core die and electrical characteristics as the FDMS3660S, differing primarily in packaging or reel configuration indicated by the suffix. It is distinct from single-channel variants like the FDMS3662.
FET, MOSFET Arrays Replacement Considerations
Direct substitutes include the FDMS3660S. Verify pinout and thermal pad connectivity when replacing with other 30V dual N-channel PQFN devices.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
