FDMS3668S

FET, MOSFET Arrays Overview

The FDMS3668S is a dual N-channel PowerTrench MOSFET module manufactured by onsemi. It features a Power-56-8 (PowerPAK) surface-mount package designed for high-efficiency power switching applications. The device specifies a drain-source breakdown voltage of 25V and offers continuous drain current ratings of 16A and 18A depending on the specific channel configuration. Key electrical parameters include a maximum gate-source voltage of ±20V, a gate threshold voltage of 2.5V, and low on-resistance values ranging from 3.5 mΩ to 6.6 mΩ. The component operates within a temperature range of -55°C to +150°C, with power dissipation capabilities between 1W and 2.3W.

FET, MOSFET Arrays Feature Summary

• Asymmetric dual N-channel configuration optimized for synchronous rectification
• Low on-resistance design for enhanced power efficiency
• Surface-mount PowerPAK package for compact board integration

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification
• Power management integrated circuits (PMIC) output stages
• Battery protection circuits in portable devices

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix or tape-and-reel quantity requirements directly with authorized distributors, as packaging formats may vary. Confirm RoHS compliance status through official manufacturer documentation prior to finalizing procurement orders. Ensure that the sourcing channel provides valid traceability for quality assurance purposes.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage, high-current synchronous rectification. Evaluate the thermal performance constraints relative to the specified power dissipation limits. Compare the on-resistance and gate charge specifications against system efficiency targets to ensure optimal switching performance.

FET, MOSFET Arrays Part Context

This part belongs to the onsemi PowerTrench MOSFET family, which focuses on low Rds(on) and fast switching speeds. The FDMS3668S utilizes advanced silicon technology to achieve high performance in a small footprint, suitable for modern space-constrained electronic designs requiring efficient power conversion.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same PowerPAK-56-8 package. Verify that substitute parts meet or exceed the 25V Vds rating and current handling capabilities. Ensure thermal characteristics and gate drive requirements are compatible with the existing circuit design.