FET, MOSFET Arrays FDMS7602S product image

FDMS7602S

$1.59
  • Description:MOSFET 2N-CH 30V 12A/17A POWER56
  • Series:PowerTrench®

SKU:579cb8b28c64 Category: Brand:

  
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FDMS7602S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 12A/17A POWER56. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMS7602S

  • Description:MOSFET 2N-CH 30V 12A/17A POWER56
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:12A, 17A
  • Rds On (Max) @ Id, Vgs:7.5mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1750pF @ 15V
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerWDFN
  • Supplier Device Package:Power56
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMS7602S

FDMS7602S

FET, MOSFET Arrays Overview

The FDMS7602S is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features a 30V drain-source breakdown voltage and supports continuous drain currents up to 30A. The device utilizes a Power-56-8 (DFN 5x6) surface-mount package. Key electrical parameters include a maximum on-resistance of 7.5 mΩ for one channel and 5 mΩ for the other at specified gate voltages. The gate threshold voltage is typically 1.8V, with a maximum gate-source voltage rating of ±20V. Operating temperatures range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration integrated into a single compact package
  • Low on-resistance design optimized for efficient power switching
  • Enhancement mode operation suitable for logic-level control

FET, MOSFET Arrays Applications

  • DC-DC converter circuits
  • Power management systems
  • Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets or manufacturer documentation before integration. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain device reliability during assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring low-voltage high-current switching capabilities. Evaluate thermal performance based on the specific PCB copper area available for heat dissipation. Compare total gate charge values against driver capabilities to ensure adequate switching speed without excessive drive current demands.

FET, MOSFET Arrays Part Context

This part belongs to the FDMS series of dual MOSFETs from onsemi. These devices are engineered for space-constrained applications where multiple switching elements are required. The PowerTrench technology indicates a focus on minimizing conduction losses within the silicon structure.

FET, MOSFET Arrays Replacement Considerations

Cross-reference tools suggest checking equivalent dual N-channel MOSFETs with similar 30V ratings and comparable Rds(on) specifications. Verify pinout compatibility and package dimensions before substituting to ensure mechanical fit.

FDMS7602SFDMS7602S
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