FDMS7608S

FET, MOSFET Arrays Overview

The FDMS7608S is a dual N-channel enhancement mode MOSFET from the PowerTrench series, housed in an 8-pin PQFN package. It integrates two independent channels with maximum drain-source voltage of 30 V. The device supports continuous drain currents of 22 A and 30 A per channel. On-resistance values are specified at 13.9 mΩ and 8.6 mΩ respectively. Gate threshold voltage ranges from 1.2 V to 2.5 V. Typical gate charges are 21 nC and 18 nC at 10 V. Maximum power dissipation is rated at 2.5 W and 2.2 W. Operating temperature spans -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for space-efficient circuit design
• PowerTrench technology optimized for low on-resistance
• Surface-mount PQFN8 package for automated assembly

FET, MOSFET Arrays Applications

• Low voltage DC-DC converter circuits
• Load switching applications
• Battery protection modules

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status using official manufacturer documentation. Ensure storage conditions maintain moisture sensitivity level integrity prior to soldering. Validate part marking against datasheet specifications to prevent counterfeit substitution.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring compact dual-NMOS solutions within 30 V limits. Evaluate thermal performance based on PCB copper area constraints due to limited power dissipation ratings. Consider gate charge requirements for driving speed optimization in high-frequency switching environments.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's PowerTrench family of silicon MOSFETs. The series focuses on delivering improved figure-of-merit characteristics for general-purpose power switching. The PQFN8 form factor enables reduced footprint compared to traditional leaded packages while maintaining adequate thermal pathways for moderate current applications.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other dual N-channel MOSFETs in PQFN8 packages offering compatible 30 V ratings. Verify pinout compatibility and electrical parameter overlaps before substitution. Check manufacturer obsolescence notices for alternative sourcing options.