FDMS9600S

FET, MOSFET Arrays Overview

The FDMS9600S is a dual N-channel PowerTrench MOSFET manufactured by onsemi, designed for high-efficiency power switching applications. It features a 25V drain-source voltage rating and operates within an extended temperature range from -55°C to +150°C. The device utilizes the Power-56-8 (DFN 8x8) surface-mount package to minimize thermal resistance and footprint. Key electrical characteristics include a maximum continuous drain current of 30A and a low on-resistance of 1.6 milliohms at a gate-source voltage of 10V. This configuration supports synchronous rectification in DC-DC converters, offering improved system efficiency through reduced conduction losses and fast switching transitions.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration optimized for synchronous rectification in point-of-load converters
• Ultra-low on-resistance minimizes conduction losses and improves overall power conversion efficiency
• Advanced PowerTrench technology ensures robust performance with fast switching speeds
• Compact DFN 8x8 package facilitates efficient heat dissipation and space-constrained PCB layouts

FET, MOSFET Arrays Applications

• Point-of-load (POL) DC-DC converters
• Synchronous rectification in server and data center power supplies
• Industrial power distribution systems
• Battery management systems requiring low-loss switching

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number and date code against official onsemi documentation. Ensure compliance with RoHS directives and confirm that the specific ordering suffix matches the required packaging format. Request material composition declarations if environmental regulations apply to the end product. Validate supplier authorization status to mitigate risks associated with counterfeit electronic components.

FET, MOSFET Arrays Selection Notes

Select this component based on the requirement for a 25V rating with minimal on-resistance in dual-channel configurations. Evaluate thermal performance requirements against the specified power dissipation capabilities in the target application environment. Consider the gate charge parameters for driving circuit compatibility and switching frequency constraints. Compare alternative packages if mechanical mounting restrictions differ from the standard DFN 8x8 form factor.

FET, MOSFET Arrays Part Context

This device belongs to the onsemi PowerTrench family of MOSFETs, which are engineered for high-density power applications. The series emphasizes low Rds(on) and fast switching characteristics to support modern efficiency standards. The FDMS9600S specifically targets synchronous rectifier roles where compact size and thermal management are critical design factors.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 25V Vds rating, dual N-channel topology, and compatible pinout. Verify that substitute devices offer equal or lower Rds(on) and similar thermal resistance values. Confirm package dimensions align with existing PCB footprints to avoid mechanical rework.