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FDP050AN06A0 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 18A/80A TO220-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDP050AN06A0
- Description：MOSFET N-CH 60V 18A/80A TO220-3
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：245W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for FDP050AN06A0
Single FETs, MOSFETs Overview
The FDP050AN06A0 is an N-Channel PowerTrench MOSFET manufactured by onsemi. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 80A at case temperature. The device exhibits a maximum on-resistance of 5 milliohms. It operates within a junction temperature range of -55°C to +175°C and offers a power dissipation capacity of 245W. The component utilizes a TO-220-3 through-hole package and includes built-in avalanche energy capability for robustness against overvoltage events.
Single FETs, MOSFETs Feature Summary
- PowerTrench technology enables low on-resistance for efficient conduction.
- Enhanced switching performance reduces dynamic losses during operation.
- Robust avalanche rating provides tolerance for inductive load switching.
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control systems
- High-side and low-side switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and ordering suffix to ensure compatibility with design requirements. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Validate thermal management solutions based on actual operating conditions rather than theoretical limits.
Single FETs, MOSFETs Selection Notes
Select this component when high current handling and low conduction loss are critical. Ensure the gate drive voltage aligns with the specified threshold characteristics. Evaluate thermal resistance parameters to determine appropriate heatsinking for the intended power dissipation levels.
Single FETs, MOSFETs Part Context
This part belongs to the FDP050AN06A0 series of N-Channel PowerTrench MOSFETs from onsemi. These devices are designed for general-purpose power switching applications requiring high efficiency and reliability. The series leverages advanced planar trench technology to optimize performance metrics.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before implementation.
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