FDP083N15A-F102

Single FETs, MOSFETs Overview

The FDP083N15A_F102 is an N-Channel PowerTrench MOSFET from onsemi, housed in a TO-220 tube package containing 50 units. It features a Drain-to-Source Voltage (VDSS) of 150 V and a continuous Drain Current (ID) of 117 A at 25°C case temperature. The device exhibits a typical static Drain-to-Source On-Resistance (RDS(on)) of 6.85 mΩ at VGS = 10 V and ID = 75 A. Key electrical parameters include a total gate charge (Qg) of 64.5 nC, a maximum power dissipation (PD) of 294 W at 25°C, and a junction-to-case thermal resistance (RθJC) of 0.51 °C/W.

Single FETs, MOSFETs Feature Summary

• Utilizes high-performance Trench technology to achieve extremely low on-state resistance while maintaining superior switching performance.
• Designed for fast switching speeds with low gate charge characteristics to minimize switching losses.
• Capable of handling high power levels and continuous current loads within specified thermal limits.

Single FETs, MOSFETs Applications

• Synchronous rectification for ATX, server, and telecom power supply units
• Battery protection circuits
• Motor drives and uninterruptible power supplies (UPS)
• Micro solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix F102 corresponds to the TO-220 tube packing method containing 50 units per tube. Confirm that the part number reflects the updated naming convention following the Fairchild Semiconductor integration into ON Semiconductor, where underscores are replaced by dashes. Ensure compliance with RoHS standards as indicated in the product features.

Single FETs, MOSFETs Selection Notes

Select this component when a 150 V N-Channel MOSFET with high current capability is required. The low RDS(on) makes it suitable for applications demanding high efficiency in power conversion. Consider the TO-220 package for through-hole mounting and adequate heat sinking capabilities. Validate that the operating temperature range of -55°C to +175°C meets the environmental requirements of the target application.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench series of MOSFETs produced using a specialized process tailored to minimize on-state resistance. Originally a Fairchild Semiconductor product, it is now managed under ON Semiconductor's portfolio. The part is designed for robust performance in power electronics, leveraging trench technology for improved electrical characteristics compared to standard planar devices.

Single FETs, MOSFETs Replacement Considerations

Check for equivalent parts within the same voltage and current class. Verify pinout compatibility and thermal resistance specifications if substituting with other manufacturers' TO-220 N-Channel MOSFETs. Ensure any replacement maintains similar switching speed and gate charge characteristics to preserve circuit timing and efficiency.

Single FETs, MOSFETs FAQ

What is the maximum drain current rating?

The continuous drain current is 117 A at a case temperature of 25°C and silicon limited. The pulsed drain current can reach 468 A.

Is this component suitable for medical implantation?

No. ON Semiconductor products are not designed, intended, or authorized for use as critical components in life support systems or any FDA Class 3 medical devices or devices intended for implantation in the human body.