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— IC芯片 | 连接器 | 传感器 | 被动器件 —
FDPC1002S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
The FDPC1002S is a 25V asymmetric dual N-Channel MOSFET from the PowerTrench Power Clip series. It integrates a control MOSFET (Q1) and a synchronous SyncFET (Q2) with an internally connected switch node to optimize layout for synchronous buck converters. Q1 features a maximum on-resistance of 7.3 mΩ at VGS = 4.5 V, while Q2 achieves 2.1 mΩ under identical conditions. The device operates within a junction temperature range of -55°C to +150°C and utilizes low-inductance packaging to minimize switching losses.
Verify component authenticity through authorized Fairchild or onsemi distributors due to industry counterfeiting risks. Confirm datasheet revision status matches the specific lot code. Ensure storage conditions adhere to moisture sensitivity level requirements prior to surface mount assembly.
Select this component for designs prioritizing minimal switch-node ringing and reduced external snubber requirements. Evaluate thermal resistance parameters against the target copper pad area to ensure adequate heat dissipation. Verify gate drive voltage compatibility with the specified threshold characteristics for optimal conduction performance.
Originally manufactured by Fairchild Semiconductor, this part belongs to the PowerTrench Power Clip family designed for high-density power conversion. Following corporate acquisitions, the product line was integrated into onsemi's portfolio. The device represents a specialized solution for optimizing synchronous buck converter footprints and electrical performance.
FDPC8016S: Higher current capability but different pinout and package dimensions.
The internal connection between the source of Q1 and the drain of Q2 eliminates the need for external copper traces between these nodes, thereby minimizing parasitic inductance and reducing high-frequency ringing during switching transitions.
The SyncFET process embeds a Schottky diode in parallel with the MOSFET body diode. This configuration improves reverse recovery characteristics compared to standard MOSFETs, enhancing overall efficiency in synchronous rectification topologies.
Designers should utilize large copper areas on both component and bottom sides for V+ and GND pins. Multiple vias should be used to interconnect ground planes, ensuring efficient heat transfer from the junction to the board rather than relying solely on air cooling.
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