FDPC1012S-P

FET, MOSFET Arrays Overview

The FDPC1012S-P is a dual N-channel PowerTrench MOSFET in a PowerClip-33 package. It features an asymmetric internal connection where the switch node of both transistors is linked, simplifying PCB layout and routing for high-current applications. The device is rated for a drain-to-source voltage of 25V. It supports continuous currents of 13A at ambient temperature (Ta) and 26A at case temperature (Tc), with pulsed current capabilities reaching 88A at Tc. Thermal resistance is characterized by junction-to-case values, ensuring efficient heat dissipation in compact power designs.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with integrated switch node connection for simplified routing
• PowerClip-33 surface mount package optimized for high thermal performance
• Asymmetric design tailored for low-voltage, high-current power management

FET, MOSFET Arrays Applications

• Point-of-load (POL) converters
• High-density server power supplies
• Consumer electronics power regulation

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'P' to confirm the PowerClip-33 package variant. Ensure compatibility with automated assembly processes due to the specific footprint requirements. Cross-reference the datasheet revision date to confirm electrical characteristics match the target design specifications before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual synchronous rectification or half-bridge configurations within a minimal footprint. The internal switch node connection reduces external component count and parasitic inductance. Evaluate thermal constraints based on the specified Ta and Tc current ratings to ensure reliable operation under maximum load conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench series, focusing on low Rds(on) and fast switching speeds. The PowerClip technology provides superior thermal conductivity compared to standard QFN packages, making it suitable for space-constrained, high-power density environments typical in modern portable and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 25V rating, dual N-channel topology, and PowerClip-33 package dimensions. Verify that alternative components offer comparable thermal resistance and current handling capabilities to maintain system reliability without redesigning the PCB layout.