FET, MOSFET Arrays FDPC1012S product image

FDPC1012S

  • Description:MOSFET 2N-CH 25V 13A PWRCLIP-33
  • Series:PowerTrench®

SKU:ce9981977e07 Category: Brand:

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FDPC1012S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 25V 13A PWRCLIP-33. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDPC1012S

  • Description:MOSFET 2N-CH 25V 13A PWRCLIP-33
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:-
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)
  • Rds On (Max) @ Id, Vgs:7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA, 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V, 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1075pF @ 13V, 3456pF @ 13V
  • Power - Max:800mW (Ta), 900mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerWDFN
  • Supplier Device Package:Powerclip-33
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDPC1012S

FDPC1012S

FET, MOSFET Arrays Overview

The FDPC1012S is a dual N-channel asymmetric MOSFET array by onsemi, housed in a Powerclip-33 surface-mount package. It features a 25V drain-source voltage rating and continuous drain currents of 13A at ambient temperature (Ta) and 26A at case temperature (Tc). Peak current capabilities reach 35A (Ta) and 88A (Tc). The device integrates an internal body diode with reverse recovery characteristics similar to a discrete Schottky diode, offering power dissipation ratings of 800mW (Ta) and 900mW (Ta) for thermal management.

FET, MOSFET Arrays Feature Summary

  • Asymmetric dual N-channel configuration integrating MOSFETs with parallel Schottky-like body diodes
  • Powerclip-33 surface-mount packaging designed for efficient thermal dissipation
  • Optimized reverse recovery performance comparable to external discrete Schottky diodes

FET, MOSFET Arrays Applications

  • Low-voltage synchronous rectification circuits
  • DC-DC converter output stages
  • Battery protection and management systems
  • High-efficiency power supply designs

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official datasheets; the base model FDPC1012S differs from FDPC1012S-P regarding power dissipation ratings. Confirm package integrity and pinout alignment with Powerclip-33 specifications during sourcing. Ensure component authenticity through authorized channels to guarantee electrical parameter compliance.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring compact dual-N-channel solutions with integrated fast-recovery diodes. Evaluate thermal constraints carefully, as power dissipation varies between Ta and Tc ratings. Compare peak current limits against transient load requirements to ensure reliable operation within the 25V voltage range.

FET, MOSFET Arrays Part Context

This part belongs to onsemi’s PowerTrench asymmetric MOSFET array family. These devices combine standard N-channel MOSFET functionality with optimized body diode characteristics. The Powerclip-33 package provides a balance of electrical isolation and thermal conductivity suitable for dense PCB layouts.

FET, MOSFET Arrays Replacement Considerations

FDPC1012S-P is a related variant with different power dissipation ratings. Verify functional equivalence before substitution. Cross-reference pinouts and thermal resistance values to ensure compatibility with existing board designs.

FDPC1012SFDPC1012S

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