FET, MOSFET Arrays FDPC8012S product image

FDPC8012S

$3.26
  • Description:MOSFET 2N-CH 25V 13A PWRCLIP-33
  • Series:PowerTrench®

SKU:05c6ca7956fd Category: Brand:

  
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FDPC8012S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 25V 13A PWRCLIP-33. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDPC8012S

  • Description:MOSFET 2N-CH 25V 13A PWRCLIP-33
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:13A, 26A
  • Rds On (Max) @ Id, Vgs:7mOhm @ 12A, 4.5V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1075pF @ 13V
  • Power - Max:800mW, 900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerWDFN
  • Supplier Device Package:Powerclip-33
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDPC8012S

FDPC8012S

FET, MOSFET Arrays Overview

The FDPC8012S is a PowerTrench Power Clip asymmetric dual N-channel MOSFET manufactured by onsemi. It features a Power-56-8 (PowerClip) surface-mount package designed for high-current applications. Key electrical parameters include a drain-source breakdown voltage (Vds) of 25 V and a continuous drain current (Id) ranging from 60 A to 100 A depending on thermal conditions. The device exhibits low on-resistance (Rds(on)) values between 1.5 mΩ and 3.9 mΩ, with a gate-source voltage (Vgs) rating of ±12 V. Gate charge (Qg) varies from 25 nC to 67 nC, supporting fast switching with rise and fall times as low as 2 ns. The component operates within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Asymmetric dual N-channel configuration optimized for half-bridge and synchronous rectifier topologies.
  • PowerClip package technology providing enhanced thermal dissipation and low inductance connections.
  • Low on-resistance characteristics to minimize conduction losses in high-current power stages.

FET, MOSFET Arrays Applications

  • DC-DC converter output stages
  • Synchronous rectification in point-of-load modules
  • Motor control driver circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix or revision code against the manufacturer's latest datasheet to ensure compatibility with design requirements. Confirm RoHS and REACH compliance status through official documentation before integration. Check for any obsolescence notices or lifecycle changes directly from onsemi channels to mitigate supply chain risks during production.

FET, MOSFET Arrays Selection Notes

Select this component when a 25 V asymmetric dual MOSFET is required for high-efficiency power conversion. Evaluate the Rds(on) and Qg trade-offs against the specific switching frequency and thermal management capabilities of the target PCB layout. Ensure the gate drive voltage aligns with the ±12 V maximum rating to prevent device damage.

FET, MOSFET Arrays Part Context

The FDPC8012S belongs to the FDPC series of PowerTrench Power Clip MOSFETs from onsemi. This family is engineered for compact, high-power density designs. Related parts in the series include the FDPC8016S and FDPC8014AS, which offer variations in resistance and current ratings while maintaining the same package footprint and switching performance profile.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include the FDPC8016S or FDPC8014AS from onsemi, provided pinout and electrical tolerances match the original design. Cross-manufacturer equivalents such as the AON6918 should be verified for package compatibility and parameter equivalence.

FDPC8012SFDPC8012S
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