FDPC8013S

FET, MOSFET Arrays Overview

The FDPC8013S is a dual N-channel enhancement-mode MOSFET from onsemi's PowerTrench series, housed in an 8-pin WDFN surface-mount package. It features a drain-source voltage (Vds) of 30 V and a maximum continuous drain current (Id) of 26 A. The device exhibits a typical on-resistance (Rds(on)) of 9.2 mΩ and a forward voltage (Vf) of 0.8 V. Key electrical parameters include a typical gate charge (Qg) of 13 nC at specified Vgs conditions. Operating temperatures range from -55°C to 150°C, with a power dissipation (Pd) rating of 2 W. The component dimensions are 3.4 mm in length and 0.75 mm in height.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact PowerClip package for efficient space utilization.
• Enhanced switching performance characterized by low gate charge and fast transition times.
• Robust thermal management capabilities supported by the PowerTrench technology and low on-resistance.

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring high efficiency and compact form factors.
• Load switch applications in portable electronic devices.
• Power management systems in industrial control equipment.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and tape/reel specifications against the official datasheet before procurement. Confirm that the requested quantity aligns with standard packaging units to avoid partial reel handling issues. Ensure compliance with RoHS and REACH requirements as stated in the manufacturer's documentation. Cross-reference part numbers with authorized distributors to confirm authenticity and availability status prior to finalizing orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring a 30 V dual N-channel MOSFET with moderate current handling capabilities. The 9.2 mΩ Rds(on) makes it suitable for low-voltage, high-efficiency power conversion stages. Consider the 2 W power dissipation limit and thermal resistance characteristics for proper heatsinking or PCB copper area allocation. Verify that the gate drive voltage levels are compatible with the threshold voltage specifications for optimal switching performance.

FET, MOSFET Arrays Part Context

The FDPC8013S belongs to onsemi's PowerTrench family, which focuses on optimizing the balance between conduction losses and switching speeds. This series utilizes advanced trench gate technology to achieve low on-resistance while maintaining robust avalanche ratings. The WDFN package provides a small footprint ideal for dense PCB layouts in consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Consult onsemi's official cross-reference tools for verified equivalent parts. Ensure any substitute maintains identical pinout, voltage/current ratings, and package dimensions. Verify thermal performance metrics match the original design constraints.