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FDQ7238AS is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 14A/11A 14SOIC. Review the specifications below when checking this part for your BOM.
The FDQ7238AS is a dual N-channel PowerTrench MOSFET in an SO-14 package designed to replace two single SO-8 devices. The high-side switch (Q1) minimizes switching losses, while the low-side switch (Q2) utilizes SyncFET technology with an integrated Schottky diode to reduce conduction losses. Q2 offers 14 A at 30 V with RDS(on) of 8.7 mΩ @ 10 V and 10.5 mΩ @ 4.5 V. Q1 provides 11 A at 30 V with RDS(on) of 13.2 mΩ @ 10 V and 16 mΩ @ 4.5 V. Operating junction temperature ranges from -55°C to +150°C.
Verify the component against the official datasheet specifications provided by Fairchild Semiconductor or its successor entities. Confirm that the device marking matches the part number exactly. Ensure the package type corresponds to the SO-14 configuration. Check for any specific ordering suffixes that may indicate variations in tape and reel quantities or environmental compliance status.
Select this component when space constraints require replacing two discrete SO-8 MOSFETs with a single SO-14 package. Choose Q2 for applications requiring lower conduction losses and fast body diode recovery due to the integrated Schottky. Select Q1 for high-side switching where minimizing turn-on and turn-off transition times is critical for overall system efficiency.
Originally manufactured by Fairchild Semiconductor, this component belongs to the PowerTrench family. Following corporate restructuring, Fairchild's semiconductor assets were acquired by onsemi. Consequently, the FDQ7238AS is now managed within the onsemi portfolio, though it retains its original Fairchild designation and technical characteristics.
No public confirmed substitute part numbers are available in the source documentation.
SyncFET technology embeds a Schottky diode in parallel with the PowerTrench MOSFET to exhibit similar characteristics to a discrete external Schottky diode, thereby reducing reverse recovery time and charge.
For minimum pad designs, the thermal resistance junction-to-ambient is 118°C/W for Q1 and 94°C/W for Q2. For larger copper pads, these values decrease to 68°C/W for Q1 and 52°C/W for Q2.
The maximum continuous drain current is 14 A for the Q2 switch and 11 A for the Q1 switch.
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