FDR8305N

FET, MOSFET Arrays Overview

The onsemi FDR8305N is a dual N-channel PowerTrench MOSFET designed for low-voltage, high-efficiency switching applications. It features a SuperSOT-8 package with dimensions 1 mm thick and a footprint 38% smaller than standard SO-8 packages. The device supports a drain-source voltage of 20 V and continuous drain current of 4.5 A. Static drain-source on-resistance is specified at 0.022 Ω at VGS = 4.5 V and 0.028 Ω at VGS = 2.5 V. Typical total gate charge is 16.2 nC, enabling fast switching speeds. Thermal resistance junction-to-ambient is 156 °C/W, with an operating temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Advanced PowerTrench process technology minimizes on-state resistance while maintaining low gate charge for superior switching performance.
• SuperSOT-8 package provides a small footprint that is 38% smaller than standard SO-8, with a low profile of 1 mm thickness.
• Logic-level gate drive capability allows efficient operation at low gate-source voltages such as 2.5 V.

FET, MOSFET Arrays Applications

• Load switch
• Motor driving
• Power Management

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully, as Fairchild Semiconductor was acquired by onsemi. Confirm the specific revision status (Rev. C or D) against current production data sheets. Ensure the ordering suffix matches the required reel size and tape width specifications for your assembly line equipment. Check for any lifecycle status changes indicating obsolescence before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require a compact dual N-channel solution in a SuperSOT-8 package. It is suitable for applications requiring logic-level gate drive at 2.5 V or 4.5 V. Evaluate thermal management requirements based on the 156 °C/W junction-to-ambient resistance. Ensure the 20 V breakdown voltage and 4.5 A continuous current ratings exceed the maximum circuit demands.

FET, MOSFET Arrays Part Context

The FDR8305N belongs to the PowerTrench family of MOSFETs originally developed by Fairchild Semiconductor. Following the acquisition of Fairchild by onsemi, these products continue under the onsemi brand portfolio. The device utilizes trench technology to achieve low RDS(on) values within a highly integrated dual configuration.

FET, MOSFET Arrays Replacement Considerations

Direct replacement requires verifying pinout compatibility with the SuperSOT-8 package. Compare electrical parameters such as RDS(on), BVDSS, and ID ratings. Ensure the replacement device supports similar logic-level gate drive voltages if used in existing 2.5 V control circuits.

FET, MOSFET Arrays FAQ

What is the typical total gate charge for the FDR8305N?

The typical total gate charge (Qg) is 16.2 nC.

How does the footprint of the FDR8305N compare to a standard SO-8?

The SuperSOT-8 package has a footprint that is 38% smaller than a standard SO-8 package.

What is the static drain-source on-resistance at a gate voltage of 2.5 V?

The maximum static drain-source on-resistance (RDS(on)) is 0.028 Ω at VGS = 2.5 V and ID = 4 A.