FDR8308P

FET, MOSFET Arrays Overview

The FDR8308P is a dual P-Channel Logic Level PowerTrench MOSFET manufactured by onsemi. It features a SuperSOT-8 package with dimensions of 4mm x 3mm x 1mm. The device supports a drain-source voltage (VDSS) of -20 V and continuous drain current (ID) of -3.2 A. Static drain-source on-resistance (RDS(ON)) is specified at 0.05 Ω @ VGS = -4.5 V and 0.07 Ω @ VGS = -2.5 V. Total gate charge (Qg) is typically 13 nC. Maximum power dissipation is 0.8 W, with junction-to-ambient thermal resistance (RθJA) of 156 °C/W. Operating temperature range spans from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual configuration in a compact SuperSOT-8 package offering a small footprint and low profile.
• Advanced PowerTrench technology designed for extremely low on-state resistance.
• Logic level operation suitable for direct drive from standard logic signals.

FET, MOSFET Arrays Applications

• Load switching
• Power management circuits
• Battery charging circuits
• DC/DC conversion

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor was acquired by onsemi. Confirm the datasheet revision matches the required specifications. Ensure the ordering suffix corresponds to the specific tape and reel or cut tape requirements for the production line. Check for RoHS compliance status if applicable to the project constraints.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in a space-constrained environment. The low RDS(ON) makes it efficient for load switching applications. Verify that the -20 V rating meets the system voltage requirements. Consider the thermal resistance characteristics for PCB layout optimization to ensure safe operating temperatures under maximum load conditions.

FET, MOSFET Arrays Part Context

The FDR8308P belongs to the SuperSOT-8 family of P-Channel Logic Level MOSFETs. This series provides a low-profile alternative to industry-standard SO-8 packages. The devices are produced using Fairchild's advanced PowerTrench process to minimize on-state resistance while maintaining superior switching performance for portable electronics.

FET, MOSFET Arrays Replacement Considerations

FDN308P: Single channel, SSOT-3 package, 20V, 1.5A.

FET, MOSFET Arrays FAQ

What is the typical total gate charge for the FDR8308P?

The typical total gate charge (Qg) is 13 nC at VDS = -10 V and ID = -4.5 A.

What is the maximum continuous drain current rating?

The maximum continuous drain current (ID) is -3.2 A at TA = 25°C.

How does the SuperSOT-8 package compare to SO-8?

The SuperSOT-8 package offers a 40% smaller footprint than the SO-8 package while maintaining comparable maximum power dissipation capabilities.