FDS3601

$0.29

Description：MOSFET 2N-CH 100V 1.3A 8SOIC
Series：PowerTrench®

SKU:ea0321f621a8 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

FDS3601 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 100V 1.3A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS3601

Description：MOSFET 2N-CH 100V 1.3A 8SOIC
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：1.3A
Rds On (Max) @ Id, Vgs：480mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：153pF @ 50V
Power - Max：900mW
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDS3601

FDS3601

FET, MOSFET Arrays Overview

The FDS3601 is a dual N-channel PowerTrench MOSFET designed for DC/DC converter efficiency. It features a 100V drain-source voltage and 1.3A continuous current rating in an SO-8 package. The device utilizes high-performance trench technology to achieve low on-resistance of 480mΩ at VGS=10V and fast switching speeds with a typical gate charge of 3.7nC. Operating junction temperatures range from -55°C to +175°C, supporting synchronous or conventional PWM controller applications.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration within a single SO-8 package
High performance trench technology for extremely low RDS(ON)
Fast switching speed and low gate charge for high frequency operation

FET, MOSFET Arrays Applications

Synchronous switching DC/DC converters
Conventional switching PWM controllers
High efficiency power supply designs

FET, MOSFET Arrays Procurement Notes

Verify the component status as obsolete when sourcing this part. Confirm that the manufacturer has ceased production and the datasheet serves as reference information only. Ensure any replacement components meet the original electrical specifications and thermal requirements for your specific application design.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel MOSFETs in a compact surface-mount package. Consider the 100V breakdown voltage and 1.3A current limits for low-power DC/DC conversion. Evaluate the thermal resistance characteristics against your board copper pad size to ensure adequate heat dissipation during operation.

FET, MOSFET Arrays Part Context

This component belongs to Fairchild Semiconductor's PowerTrench family of MOSFETs. The series focuses on improving overall efficiency in DC/DC converters through faster switching and lower gate charge compared to comparable devices. The dual configuration allows for space-saving designs in power management circuits.