FDS3890

FET, MOSFET Arrays Overview

The FDS3890 is a dual N-channel enhancement-mode MOSFET from the PowerTrench series, designed for DC-DC converter efficiency. It features an SOIC-8 surface-mount package with two isolated channels. Key electrical parameters include a drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 4.7 A. The static drain-source on-resistance (Rds(on)) is specified at 44 mΩ at Vgs = 10 V and 50 mΩ at Vgs = 6 V. Total gate charge (Qg) is typically 25 nC. The device operates within a junction temperature range of -55°C to +175°C.

FET, MOSFET Arrays Feature Summary

• High performance trench technology for extremely low Rds(on)
• Fast switching speed with lower gate charge
• High power and current handling capability

FET, MOSFET Arrays Applications

• Synchronous switching PWM controllers
• Conventional switching PWM controllers
• DC-DC converters

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking the marking diagram against the physical package. Confirm the specific ordering suffix matches the required tape and reel specifications. Ensure the procurement documentation references the correct datasheet revision to validate the Pb-free and halide-free status. Cross-reference the manufacturer part number with official distributor catalogs to confirm availability.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring dual N-channel isolation in a compact SOIC-8 footprint. Evaluate thermal resistance values based on the specific copper pad area used on the PCB layout. Consider the gate threshold voltage characteristics relative to the driving controller logic levels. Verify that the maximum avalanche energy ratings align with the circuit's transient requirements.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of MOSFETs manufactured by onsemi. It utilizes high-performance trench technology to achieve low on-resistance. The dual configuration allows for space-saving designs in bridge or half-bridge applications. The SOIC-8 package provides a balance between thermal dissipation and board space efficiency.

FET, MOSFET Arrays Replacement Considerations

Verify pinout compatibility and package dimensions before substitution. Check if alternative parts meet the 80 V drain-source voltage and 4.7 A continuous current requirements. Ensure the replacement offers comparable Rds(on) and gate charge specifications to maintain switching efficiency.