FDS3912

FET, MOSFET Arrays Overview

The FDS3912 is a dual N-channel PowerTrench MOSFET manufactured by Fairchild Semiconductor, now part of onsemi. It features a SOIC-8 surface-mount package with two independent channels. Key electrical parameters include a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 3 A per channel. The static drain-source on-resistance (RDS(on)) is specified at 125 mΩ maximum at VGS = 10 V and 135 mΩ at VGS = 6 V. Total gate charge (Qg) is typically 14 nC. The device supports an operating junction temperature range from -55 °C to +175 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a single compact SOIC-8 package
• High-performance trench technology for low on-resistance
• Optimized for fast switching speeds and low gate charge
• Designed for improved efficiency in DC/DC converters

FET, MOSFET Arrays Applications

• Synchronous PWM controllers in DC/DC converters
• Conventional switching PWM controllers
• High-frequency power supply designs

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or onsemi, as corporate acquisitions affect branding. Confirm the specific revision code matches the datasheet Rev C2(W). Ensure the package marking corresponds to the SOIC-8 form factor. Check for RoHS compliance status if required by your design specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET is required for space-constrained PCB layouts. The 100 V rating suits intermediate voltage DC/DC applications. Consider the thermal resistance values relative to your copper pad area. Verify that the gate drive voltage meets the RDS(on) requirements for optimal conduction losses.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of MOSFETs, known for utilizing advanced trench gate technology to minimize on-resistance while maintaining fast switching characteristics. The dual-channel design allows for cost-effective implementation of half-bridge or synchronous rectifier topologies within a standard surface-mount footprint.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings before considering any alternative dual N-channel MOSFETs from other manufacturers.