FDS4501H

FET, MOSFET Arrays Overview

The FDS4501H is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. It features a maximum drain-source voltage of 30 V and a continuous drain current of 28 A at 25 °C. The device utilizes a DFN5x6 package with an exposed thermal pad for efficient heat dissipation. Key electrical characteristics include a maximum on-resistance of 7.5 mΩ at a gate-source voltage of 10 V and 9.5 mΩ at 5 V. The component supports a junction temperature range from -55 °C to +175 °C, making it suitable for high-power surface-mount applications requiring low conduction losses.

FET, MOSFET Arrays Feature Summary

• Dual configuration providing two independent N-channel MOSFETs in a single compact package
• Low on-resistance design optimized for minimizing conduction losses in power switching circuits
• Exposed thermal pad architecture facilitating effective heat transfer from the die to the PCB

FET, MOSFET Arrays Applications

• DC-DC converter modules for point-of-load regulation
• Synchronous rectification stages in power supply designs
• Motor control circuits requiring low-side switching

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal specifications. Ensure that the procurement channel provides traceable documentation confirming the component originates directly from onsemi or an authorized distribution network. Cross-reference the lot code with recent production change notices to validate material composition and manufacturing origin prior to integration into final assemblies.

FET, MOSFET Arrays Selection Notes

Select this component when system requirements demand a dual N-channel topology within a constrained footprint. The 30 V rating and 28 A current capacity define the operational boundaries for load management. Evaluate the thermal resistance characteristics relative to the printed circuit board copper area to ensure junction temperatures remain within the specified maximum limits during continuous operation under full load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the FDS series of dual MOSFETs from onsemi, designed specifically for space-constrained power applications. The series integrates two matched transistors to simplify layout and reduce component count compared to discrete solutions. It serves as a standard solution for low-voltage, high-current switching tasks in consumer electronics and industrial equipment where efficiency and size are critical design parameters.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 30 V / 28 A specification and DFN5x6 package dimensions. Verify that alternative dual N-channel devices offer comparable on-resistance values and thermal performance to maintain system efficiency and reliability without requiring redesign of the cooling infrastructure.