FET, MOSFET Arrays FDS4885C product image

FDS4885C

$0.60
  • Description:MOSFET N/P-CH 40V 7.5A/6A 8SOIC
  • Series:PowerTrench®

SKU:6cd71a3ae415 Category: Brand:

  
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FDS4885C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 40V 7.5A/6A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS4885C

  • Description:MOSFET N/P-CH 40V 7.5A/6A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:7.5A, 6A
  • Rds On (Max) @ Id, Vgs:22mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:900pF @ 20V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS4885C

FDS4885C

FET, MOSFET Arrays Overview

The FDS4885C is a dual N- and P-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It integrates an N-channel device (Q1) rated at 7.5A, 40V with RDS(on) of 22mΩ @ VGS=10V, and a P-channel device (Q2) rated at -6A, -40V with RDS(on) of 31mΩ @ VGS=-10V. The component utilizes the SO-8 surface mount package. Key electrical parameters include a continuous drain current of 7.5A for Q1 and -6A for Q2, a gate-source voltage limit of ±20V, and a junction temperature range from -55°C to +150°C. Thermal resistance (junction-to-ambient) is specified at 78°C/W under standard mounting conditions.

FET, MOSFET Arrays Feature Summary

  • Integrates complementary N- and P-channel enhancement mode power field effect transistors within a single surface mount package.
  • Utilizes advanced PowerTrench process technology designed to minimize on-state resistance while maintaining superior switching performance.
  • Optimized for low voltage and battery-powered applications requiring low in-line power loss and fast switching capabilities.

FET, MOSFET Arrays Applications

  • Synchronous rectifier circuits
  • Backlight inverter stages

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer status as this datasheet indicates the product may be obsolete or discontinued by Fairchild Semiconductor. Confirm availability through authorized distributors or secondary market suppliers. Ensure that any replacement components maintain compatibility with the original SO-8 footprint and electrical specifications required for your specific circuit design.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a matched pair of N- and P-channel MOSFETs in a compact SO-8 package. Consider the 40V breakdown voltage and current ratings suitable for low-voltage DC-DC converters or motor control interfaces. Evaluate thermal management requirements based on the 78°C/W junction-to-ambient resistance value provided in the datasheet.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of MOSFETs produced by Fairchild Semiconductor. It represents a dual-transistor solution combining separate N-channel and P-channel logic-level devices into one assembly. This integration reduces board space compared to using discrete components and ensures matched thermal characteristics between the two channels.

FET, MOSFET Arrays Replacement Considerations

Check for direct replacements such as the FDS4885 or other dual MOSFETs in SO-8 packages with similar 40V/7.5A ratings. Verify pinout compatibility and ensure that the substitute part meets the same RDS(on) and switching speed requirements for synchronous rectification or inversion applications.

FDS4885CFDS4885C
$0.60
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