FET, MOSFET Arrays FDS4897C product image

FDS4897C

$1.21
  • Description:MOSFET N/P-CH 40V 6.2A 8SOIC
  • Series:PowerTrench®

SKU:4711926f6880 Category: Brand:

  
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FDS4897C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 40V 6.2A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS4897C

  • Description:MOSFET N/P-CH 40V 6.2A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:6.2A, 4.4A
  • Rds On (Max) @ Id, Vgs:29mOhm @ 6.2A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:760pF @ 20V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS4897C

FDS4897C

FET, MOSFET Arrays Overview

The onsemi FDS4897C is a dual N- and P-channel enhancement mode power MOSFET manufactured using the PowerTrench process. It integrates an N-channel transistor (Q1) rated at 6.2A continuous drain current with a maximum RDS(on) of 29mΩ at VGS=10V, and a P-channel transistor (Q2) rated at -4.4A with a maximum RDS(on) of 46mΩ at VGS=-10V. Both channels support a 40V Drain-Source Voltage (VDSS). The device operates within a junction temperature range of -55°C to +150°C and is housed in an SO-8 surface mount package.

FET, MOSFET Arrays Feature Summary

  • Dual configuration combining N-channel and P-channel transistors in a single package
  • PowerTrench process technology for minimized on-state resistance
  • High power handling capability suitable for surface mount applications

FET, MOSFET Arrays Applications

  • Inverter circuits
  • Power supply designs

FET, MOSFET Arrays Procurement Notes

Verify component status before procurement as the datasheet explicitly marks this device as discontinued and not recommended for new design. Confirm updated ordering information via official onsemi channels due to historical Fairchild Semiconductor integration changes affecting part nomenclature. Ensure compliance with RoHS standards if applicable to legacy inventory usage.

FET, MOSFET Arrays Selection Notes

Select this component only for maintenance or replacement of existing designs where the specific dual N/P channel characteristics are required. Evaluate thermal management requirements carefully given the 2W power dissipation limit in dual operation. Consider alternative modern components for new designs due to the discontinued status.

FET, MOSFET Arrays Part Context

Originally produced by Fairchild Semiconductor, this part was integrated into the onsemi portfolio following corporate acquisition. The datasheet reflects the transition period, noting that Fairchild orderable part numbers were adjusted to meet onsemi system requirements, specifically changing underscores to dashes in some identifiers.

FET, MOSFET Arrays Replacement Considerations

The datasheet identifies no direct public substitute part numbers. Users are advised to contact onsemi representatives for information regarding compatible replacements or newer generation devices.

FDS4897CFDS4897C
$1.21
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