FDS4935A

FET, MOSFET Arrays Overview

The FDS4935A is a dual P-Channel MOSFET from onsemi's POWERTRENCH series, designed for power management applications. It operates with a drain-source voltage of -30 V and supports continuous drain currents up to -7 A. The device features an extremely low static drain-source on-resistance of 23 mΩ at VGS = -10 V and 35 mΩ at VGS = -4.5 V. It utilizes advanced trench technology to achieve fast switching speeds and low gate charge (typical 15 nC). The component is housed in an SOIC-8 package and is rated for junction temperatures ranging from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Advanced POWERTRENCH process optimized for wide gate drive voltage ratings
• High performance trench technology for extremely low RDS(ON)
• Fast switching speed capability
• Pb-Free device construction

FET, MOSFET Arrays Applications

• Power management circuits
• Load switching modules
• Battery protection systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel specifications. Ensure that the procurement channel provides valid traceability data consistent with onsemi manufacturing standards. Confirm RoHS compliance status through the manufacturer's official product declarations before finalizing acquisition.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring dual P-Channel MOSFETs with low on-resistance and high current handling capabilities. Evaluate thermal resistance parameters based on the specific PCB copper pad area and mounting configuration. Ensure the gate drive voltage aligns with the specified operating range of 4.5 V to 20 V for optimal performance.

FET, MOSFET Arrays Part Context

This device belongs to the FDS4935 family of dual P-Channel MOSFETs manufactured by onsemi. It shares the same core POWERTRENCH technology but may differ in specific electrical characteristics or packaging options compared to other variants within the series. The FDS4935A specifically targets applications needing robust performance in compact surface-mount configurations.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains compatibility with the SOIC-8 package dimensions and meets the required -30 V breakdown voltage and current handling specifications.