FET, MOSFET Arrays FDS4935BZ product image

FDS4935BZ

$1.24
  • Description:MOSFET 2P-CH 30V 6.9A 8SOIC
  • Series:PowerTrench®

SKU:c88e57bb33d9 Category: Brand:

  
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FDS4935BZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 30V 6.9A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS4935BZ

  • Description:MOSFET 2P-CH 30V 6.9A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.9A
  • Rds On (Max) @ Id, Vgs:22mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1360pF @ 15V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS4935BZ

FDS4935BZ

FET, MOSFET Arrays Overview

The FDS4935BZ is a dual P-channel PowerTrench MOSFET manufactured by onsemi. It features a 30V drain-source breakdown voltage and a continuous drain current of 6.9A. The device exhibits a maximum on-resistance of 18 mΩ at Vgs = -10V. It operates with a gate-source voltage range of ±25V and has a typical gate charge of 29 nC. Thermal performance includes a power dissipation rating of 1.6W, with an operating temperature range from -55°C to +150°C. The component utilizes SOIC-8 surface-mount packaging.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration for efficient space-saving integration
  • PowerTrench technology optimized for low conduction losses
  • Enhanced switching characteristics with defined rise and fall times

FET, MOSFET Arrays Applications

  • DC/DC converter output stages
  • Load switch applications
  • Motor control circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'BZ' against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure that the ordering information matches the exact electrical parameters required for the design, as variations in suffixes may indicate different packaging or testing criteria. Cross-reference the part number with the latest onsemi documentation to avoid discrepancies.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required within a 30V system. The 18 mΩ on-resistance supports moderate current loads up to 6.9A. Consider the SOIC-8 footprint for PCB layout constraints. Compare thermal resistance values against the application's heat dissipation requirements to ensure reliable operation within the specified temperature range.

FET, MOSFET Arrays Part Context

This part belongs to the FDS4935 series of dual P-channel MOSFETs. It shares the same core die and electrical characteristics as the FDS4935A but differs in packaging and potentially testing standards. The series is designed for general-purpose switching applications requiring compact dual-channel solutions.

FET, MOSFET Arrays Replacement Considerations

The FDS4935A is a direct functional equivalent within the same series. Verify pinout compatibility and ensure the alternative meets the 18 mΩ Rds(on) requirement. Check if the replacement package matches the SOIC-8 form factor for board-level interchangeability.

FDS4935BZFDS4935BZ
$1.24
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