FDS4953

FET, MOSFET Arrays Overview

The FDS4953 is a dual P-Channel PowerTrench MOSFET designed for power management applications requiring wide gate drive voltage ratings from 4.5V to 25V. It features a rugged gate structure and advanced trench technology optimized for low on-resistance and fast switching speeds. The device provides –5 A continuous drain current and –30 V drain-source voltage with an RDS(ON) of 55 mΩ at VGS = –10 V and 95 mΩ at VGS = –4.5 V. Total gate charge is typically 6 nC, supporting high-frequency operation in synchronous buck converters and load switch circuits.

FET, MOSFET Arrays Feature Summary

• Advanced PowerTrench process technology for extremely low RDS(ON)
• Rugged gate version optimized for wide range of gate drive voltages
• Low gate charge (6 nC typical) enabling fast switching speed

FET, MOSFET Arrays Applications

• Power management systems
• Load switch circuits
• Battery protection modules

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entities like onsemi when sourcing this component. Confirm the package marking matches 'FDS4953' and ensure the reel size corresponds to 13 inches with a 12mm tape width containing 2500 units per reel. Cross-reference datasheet revision D1(W) to confirm electrical characteristics align with design requirements.

FET, MOSFET Arrays Selection Notes

Select the FDS4953 for designs requiring dual P-channel isolation within a single SO-8 footprint. Ensure the application operates within the specified –30 V drain-source voltage limit and –5 A continuous current rating. Consider thermal resistance values based on copper pad area, as junction-to-ambient resistance varies significantly between minimum pads and larger 0.5in² copper areas.

FET, MOSFET Arrays Part Context

This component belongs to the Fairchild Semiconductor PowerTrench family of dual MOSFETs. It utilizes a specific trench gate architecture to achieve superior performance compared to standard planar devices. The dual configuration allows for independent control of two P-channel channels within a compact surface-mount package, facilitating efficient power distribution in space-constrained electronics.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers include FDS4935A, FDS9953A, SI6933DQ, and SI6955DQ. Verify pinout compatibility and electrical parameters such as RDS(ON) and breakdown voltage before substitution.