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FDS6692A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 9A 8SOIC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDS6692A
- Description：MOSFET N-CH 30V 9A 8SOIC
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11.5mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1610 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.47W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for FDS6692A
Single FETs, MOSFETs Overview
The onsemi FDS6692A is a single N-channel enhancement mode MOSFET from the PowerTrench series. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 9 A. The device utilizes an 8-pin SOIC surface-mount package. Key electrical parameters include a maximum on-resistance (Rds(on)) of 15 mΩ, a typical gate charge (Qg) of 14 nC at Vgs = 10 V, and a power dissipation (Pd) of 2.5 W. The operating temperature range spans from -55°C to +150°C junction temperature.
Single FETs, MOSFETs Feature Summary
- Optimized for low gate charge and low on-resistance to improve DC/DC converter efficiency
- Designed for use with synchronous or traditional switching PWM controllers
- Enhanced for high-speed switching applications
Single FETs, MOSFETs Applications
- DC/DC converters
- Synchronous rectification circuits
- Power management systems using PWM controllers
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and ordering suffixes when sourcing. Confirm that the component meets the required thermal and electrical specifications for the target application. Ensure compliance with relevant industry standards and RoHS directives as specified in the official documentation before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a 30 V N-channel MOSFET with optimized switching performance. The low gate charge facilitates efficient operation with various PWM controllers. Consider the 8-pin SOIC package constraints for PCB layout and thermal management requirements relative to the 2.5 W power dissipation rating.
Single FETs, MOSFETs Part Context
The FDS6692A belongs to onsemi's PowerTrench family of single N-channel MOSFETs. This series is engineered to provide superior performance in power switching applications through minimized on-resistance and gate charge. The component represents a solution for improving overall system efficiency in compact surface-mount designs.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical ratings carefully. No specific substitute part numbers are confirmed in the provided source material.
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