FDS6875

FET, MOSFET Arrays Overview

The FDS6875 is a dual P-channel MOSFET manufactured by onsemi using the PowerTrench process. It integrates two independent channels in an SO-8 surface-mount package. The device features a drain-source breakdown voltage of -20 V and a continuous drain current rating of -6 A. Key electrical parameters include a maximum gate-source voltage of ±20 V, a threshold voltage of 3 V, and a typical on-resistance of 1.6 ohms at VGS = -4.5 V. The component operates within a temperature range of -55°C to +150°C with a power dissipation capability of 1.6 W.

FET, MOSFET Arrays Feature Summary

• Dual channel integration for space-efficient circuit design
• Optimized low on-state resistance via PowerTrench technology
• Enhanced thermal stability for high-temperature operation

FET, MOSFET Arrays Applications

• Battery protection circuits
• Power management modules
• Load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the requested variant matches the required pin configuration and thermal characteristics. Cross-reference the component marking code with official documentation to authenticate the source and prevent counterfeit substitution during procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage power paths. Evaluate the 1.6 ohm on-resistance against system efficiency requirements. Ensure the SO-8 package footprint aligns with PCB layout constraints. Consider the -20 V rating relative to the maximum supply voltage to maintain adequate safety margins during operation.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family of silicon MOSFETs. It is designed for general-purpose switching applications where size and cost are critical factors. The dual configuration allows for synchronized control of multiple loads or differential signaling in compact form factors suitable for consumer electronics and industrial equipment.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the -20 V rating, SO-8 package, and dual P-channel topology. Verify compatibility with existing gate drive voltages and thermal management requirements before implementation.